A micromachined finite coplanar line-to-silicon micromachined waveguide transition for millimeter and submillimeter wave applications

Yongshik Lee; James P. Becker; Jack R. East; Linda P.B. Katehi

doi:10.1109/MWSYM.2002.1012228

A micromachined finite coplanar line-to-silicon micromachined waveguide transition for millimeter and submillimeter wave applications

Yongshik Lee, James P. Becker, Jack R. East, Linda P.B. Katehi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A finite ground coplanar (FGC) line-to-waveguide transition utilizing a novel, free-standing printed E-plane probe has been demonstrated in W-band (75-110GHz). One way to improve the performance of such a transition and to extend its utility well into the submillimeter range is to thin the supporting substrate beneath the probe. This paper presents the W-band performance of a fully micromachined finite ground coplanar line-to-silicon diamond waveguide transition with the substrate beneath the probe entirely removed, thus forming a free-stranding metal structure.

Original language	English
Pages (from-to)	1871-1874
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
DOIs	https://doi.org/10.1109/MWSYM.2002.1012228
Publication status	Published - 2002

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2002.1012228

Fingerprint Dive into the research topics of 'A micromachined finite coplanar line-to-silicon micromachined waveguide transition for millimeter and submillimeter wave applications'. Together they form a unique fingerprint.

Cite this

@article{e59f3dc5487a43199cc44420f6dea18d,

title = "A micromachined finite coplanar line-to-silicon micromachined waveguide transition for millimeter and submillimeter wave applications",

abstract = "A finite ground coplanar (FGC) line-to-waveguide transition utilizing a novel, free-standing printed E-plane probe has been demonstrated in W-band (75-110GHz). One way to improve the performance of such a transition and to extend its utility well into the submillimeter range is to thin the supporting substrate beneath the probe. This paper presents the W-band performance of a fully micromachined finite ground coplanar line-to-silicon diamond waveguide transition with the substrate beneath the probe entirely removed, thus forming a free-stranding metal structure.",

author = "Yongshik Lee and Becker, {James P.} and East, {Jack R.} and Katehi, {Linda P.B.}",

year = "2002",

doi = "10.1109/MWSYM.2002.1012228",

language = "English",

volume = "3",

pages = "1871--1874",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - A micromachined finite coplanar line-to-silicon micromachined waveguide transition for millimeter and submillimeter wave applications

AU - Lee, Yongshik

AU - Becker, James P.

AU - East, Jack R.

AU - Katehi, Linda P.B.

PY - 2002

Y1 - 2002

N2 - A finite ground coplanar (FGC) line-to-waveguide transition utilizing a novel, free-standing printed E-plane probe has been demonstrated in W-band (75-110GHz). One way to improve the performance of such a transition and to extend its utility well into the submillimeter range is to thin the supporting substrate beneath the probe. This paper presents the W-band performance of a fully micromachined finite ground coplanar line-to-silicon diamond waveguide transition with the substrate beneath the probe entirely removed, thus forming a free-stranding metal structure.

AB - A finite ground coplanar (FGC) line-to-waveguide transition utilizing a novel, free-standing printed E-plane probe has been demonstrated in W-band (75-110GHz). One way to improve the performance of such a transition and to extend its utility well into the submillimeter range is to thin the supporting substrate beneath the probe. This paper presents the W-band performance of a fully micromachined finite ground coplanar line-to-silicon diamond waveguide transition with the substrate beneath the probe entirely removed, thus forming a free-stranding metal structure.

UR - http://www.scopus.com/inward/record.url?scp=0036065926&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036065926&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2002.1012228

DO - 10.1109/MWSYM.2002.1012228

M3 - Article

AN - SCOPUS:0036065926

VL - 3

SP - 1871

EP - 1874

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

ER -

A micromachined finite coplanar line-to-silicon micromachined waveguide transition for millimeter and submillimeter wave applications

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this