Abstract
We investigate the InAlAs/InGaAs metamorphic HEMT on GaAs substrate as a harmonic optoelectronic mixer. The fabricated metamorphic HEMT simultaneously performs photodetection at 1.55μm lightwave and harmonic optoelectronic up-conversion into millimeter-wave band. By changing the bias conditions of the HEMT, the harmonic optoelectronic mixing efficiency can be selectively enhanced while suppressing undesired mixing components. The metamorphic HEMT as a harmonic optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic millimeter-wave transmission systems.
| Original language | English |
|---|---|
| Pages (from-to) | 1383-1386 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 2 |
| Publication status | Published - 2003 Aug 18 |
| Event | 2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: 2003 Jun 8 → 2003 Jun 13 |
All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cite this
Choi, C. S., Choi, W. Y., Kim, D. H., & Seo, K. S. (2003). A millimeter-wave harmonic optoelectronic mixer based on InAlAs/InGaAs metamorphic HEMT. IEEE MTT-S International Microwave Symposium Digest, 2, 1383-1386.