A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor

Myung Koo Kang, Si Joon Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Sequential lateral solidification (SLS) thin-film transistors (TFTs) offer higher performance than conventional excimer laser-annealed TFTs. However, their performance has an anisotropy originating from the polycrystalline silicon (p-Si) microstructure. The properties of TFTs with channel direction parallel to the lateral growth (parallel TFTs) are superior to those of TFTs with a perpendicular channel direction (perpendicular TFTs). The multi-channel structure proposed in this paper, which directly incorporates a parallel component in a perpendicular TFT, exhibits greatly improved properties. This MC structure can be applied not only to p-Si produced by SLS, but also to any material with property anisotropy.

Original languageEnglish
Article number202103
JournalApplied Physics Letters
Volume97
Issue number20
DOIs
Publication statusPublished - 2010 Nov 15

Fingerprint

solidification
transistors
thin films
anisotropy
silicon
excimer lasers
microstructure

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor. / Kang, Myung Koo; Kim, Si Joon; Kim, Hyun Jae.

In: Applied Physics Letters, Vol. 97, No. 20, 202103, 15.11.2010.

Research output: Contribution to journalArticle

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