A new approach of polycrystalline silicon film on plastic substrate prepared by ion beam deposition followed by excimer laser crystallization at room temperature

Jang Yeon Kwon, Hyuck Lim, Kyung Bae Park, Ji Sim Jung, Do Young Kim, Hans S. Cho, Seok Pil Kim, Young Soo Park, Jong Man Kim, Takashi Noguchi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

In this work, we propose a new polycrystalline silicon (poly-Si) film of large grain for thin film transistor on flexible substrate. Thin films of amorphous silicon were deposited on plastic substrate by using ion beam deposition (IBD) and crystallized by excimer laser annealing. The entire process was carried out at room temperature. Si film formed by IBD has much lower impurity such as Ar, O, and H than that deposited by conventional sputtering method. This high purity of Si film makes large grain size (0.5 μm) and shows high endurance of excimer laser energy both on quartz and plastic substrate for flexible active matrix organic light emitting diode (AMOLED).

Original languageEnglish
Pages (from-to)4362-4364
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number5 B
DOIs
Publication statusPublished - 2006 May 25

Fingerprint

Excimer lasers
silicon films
Polysilicon
excimer lasers
Ion beams
plastics
Crystallization
ion beams
crystallization
Plastics
room temperature
Substrates
laser annealing
endurance
Organic light emitting diodes (OLED)
Thin film transistors
thin films
Amorphous silicon
Temperature
amorphous silicon

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kwon, Jang Yeon ; Lim, Hyuck ; Park, Kyung Bae ; Jung, Ji Sim ; Kim, Do Young ; Cho, Hans S. ; Kim, Seok Pil ; Park, Young Soo ; Kim, Jong Man ; Noguchi, Takashi. / A new approach of polycrystalline silicon film on plastic substrate prepared by ion beam deposition followed by excimer laser crystallization at room temperature. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 5 B. pp. 4362-4364.
@article{2e0a94e20c45419c9de410ce030235f7,
title = "A new approach of polycrystalline silicon film on plastic substrate prepared by ion beam deposition followed by excimer laser crystallization at room temperature",
abstract = "In this work, we propose a new polycrystalline silicon (poly-Si) film of large grain for thin film transistor on flexible substrate. Thin films of amorphous silicon were deposited on plastic substrate by using ion beam deposition (IBD) and crystallized by excimer laser annealing. The entire process was carried out at room temperature. Si film formed by IBD has much lower impurity such as Ar, O, and H than that deposited by conventional sputtering method. This high purity of Si film makes large grain size (0.5 μm) and shows high endurance of excimer laser energy both on quartz and plastic substrate for flexible active matrix organic light emitting diode (AMOLED).",
author = "Kwon, {Jang Yeon} and Hyuck Lim and Park, {Kyung Bae} and Jung, {Ji Sim} and Kim, {Do Young} and Cho, {Hans S.} and Kim, {Seok Pil} and Park, {Young Soo} and Kim, {Jong Man} and Takashi Noguchi",
year = "2006",
month = "5",
day = "25",
doi = "10.1143/JJAP.45.4362",
language = "English",
volume = "45",
pages = "4362--4364",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5 B",

}

A new approach of polycrystalline silicon film on plastic substrate prepared by ion beam deposition followed by excimer laser crystallization at room temperature. / Kwon, Jang Yeon; Lim, Hyuck; Park, Kyung Bae; Jung, Ji Sim; Kim, Do Young; Cho, Hans S.; Kim, Seok Pil; Park, Young Soo; Kim, Jong Man; Noguchi, Takashi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 5 B, 25.05.2006, p. 4362-4364.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A new approach of polycrystalline silicon film on plastic substrate prepared by ion beam deposition followed by excimer laser crystallization at room temperature

AU - Kwon, Jang Yeon

AU - Lim, Hyuck

AU - Park, Kyung Bae

AU - Jung, Ji Sim

AU - Kim, Do Young

AU - Cho, Hans S.

AU - Kim, Seok Pil

AU - Park, Young Soo

AU - Kim, Jong Man

AU - Noguchi, Takashi

PY - 2006/5/25

Y1 - 2006/5/25

N2 - In this work, we propose a new polycrystalline silicon (poly-Si) film of large grain for thin film transistor on flexible substrate. Thin films of amorphous silicon were deposited on plastic substrate by using ion beam deposition (IBD) and crystallized by excimer laser annealing. The entire process was carried out at room temperature. Si film formed by IBD has much lower impurity such as Ar, O, and H than that deposited by conventional sputtering method. This high purity of Si film makes large grain size (0.5 μm) and shows high endurance of excimer laser energy both on quartz and plastic substrate for flexible active matrix organic light emitting diode (AMOLED).

AB - In this work, we propose a new polycrystalline silicon (poly-Si) film of large grain for thin film transistor on flexible substrate. Thin films of amorphous silicon were deposited on plastic substrate by using ion beam deposition (IBD) and crystallized by excimer laser annealing. The entire process was carried out at room temperature. Si film formed by IBD has much lower impurity such as Ar, O, and H than that deposited by conventional sputtering method. This high purity of Si film makes large grain size (0.5 μm) and shows high endurance of excimer laser energy both on quartz and plastic substrate for flexible active matrix organic light emitting diode (AMOLED).

UR - http://www.scopus.com/inward/record.url?scp=33744492340&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33744492340&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.4362

DO - 10.1143/JJAP.45.4362

M3 - Article

AN - SCOPUS:33744492340

VL - 45

SP - 4362

EP - 4364

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 B

ER -