A new photoelectrochemical etching method for the fabrication of GaN MESFETs

Won Sang Lee, Yoon Ho Choi, Ki Woong Chung, Dong Chan Moon, Moo Whan Shin

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Abstract

A new photoelectrochemical etching method was developed and employed for the fabrication of GaN metal-semiconductor field effect transistors (MESFETs). The unique etching process utilizes a photoresistive mask and a KOH-based etchant. The etching rate of the etchant, with 1.0 mol% of KOH, for n-GaN is as high as 1600 Å/min at a Hg-illumination intensity of 35 mW/cm 2. The fabricated GaN MESFET exhibited a current saturation at V ds = 10 V and a pinch-off at V gs = -3 V. The peak drain current of the device was about 25 mA/mm at 300 K, and the value remained almost same for 500 K operation. The insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and to the band-bending at the subgrain boundaries in GaN thin films.

Original languageEnglish
Pages (from-to)S283-S286
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 2
Publication statusPublished - 1999 Dec 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lee, W. S., Choi, Y. H., Chung, K. W., Moon, D. C., & Shin, M. W. (1999). A new photoelectrochemical etching method for the fabrication of GaN MESFETs. Journal of the Korean Physical Society, 35(SUPPL. 2), S283-S286.