A new photoelectrochemical etching method for the fabrication of GaN MESFETs

Won Sang Lee, Yoon Ho Choi, Ki Woong Chung, Dong Chan Moon, Moo Whan Shin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A new photoelectrochemical etching method was developed and employed for the fabrication of GaN metal-semiconductor field effect transistors (MESFETs). The unique etching process utilizes a photoresistive mask and a KOH-based etchant. The etching rate of the etchant, with 1.0 mol% of KOH, for n-GaN is as high as 1600 Å/min at a Hg-illumination intensity of 35 mW/cm 2. The fabricated GaN MESFET exhibited a current saturation at V ds = 10 V and a pinch-off at V gs = -3 V. The peak drain current of the device was about 25 mA/mm at 300 K, and the value remained almost same for 500 K operation. The insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and to the band-bending at the subgrain boundaries in GaN thin films.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 2
Publication statusPublished - 1999 Dec 1

Fingerprint

field effect transistors
etchants
etching
fabrication
metals
masks
illumination
activation energy
saturation
ionization
sensitivity
defects
thin films
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lee, Won Sang ; Choi, Yoon Ho ; Chung, Ki Woong ; Moon, Dong Chan ; Shin, Moo Whan. / A new photoelectrochemical etching method for the fabrication of GaN MESFETs. In: Journal of the Korean Physical Society. 1999 ; Vol. 35, No. SUPPL. 2.
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abstract = "A new photoelectrochemical etching method was developed and employed for the fabrication of GaN metal-semiconductor field effect transistors (MESFETs). The unique etching process utilizes a photoresistive mask and a KOH-based etchant. The etching rate of the etchant, with 1.0 mol{\%} of KOH, for n-GaN is as high as 1600 {\AA}/min at a Hg-illumination intensity of 35 mW/cm 2. The fabricated GaN MESFET exhibited a current saturation at V ds = 10 V and a pinch-off at V gs = -3 V. The peak drain current of the device was about 25 mA/mm at 300 K, and the value remained almost same for 500 K operation. The insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and to the band-bending at the subgrain boundaries in GaN thin films.",
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A new photoelectrochemical etching method for the fabrication of GaN MESFETs. / Lee, Won Sang; Choi, Yoon Ho; Chung, Ki Woong; Moon, Dong Chan; Shin, Moo Whan.

In: Journal of the Korean Physical Society, Vol. 35, No. SUPPL. 2, 01.12.1999.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A new photoelectrochemical etching method for the fabrication of GaN MESFETs

AU - Lee, Won Sang

AU - Choi, Yoon Ho

AU - Chung, Ki Woong

AU - Moon, Dong Chan

AU - Shin, Moo Whan

PY - 1999/12/1

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N2 - A new photoelectrochemical etching method was developed and employed for the fabrication of GaN metal-semiconductor field effect transistors (MESFETs). The unique etching process utilizes a photoresistive mask and a KOH-based etchant. The etching rate of the etchant, with 1.0 mol% of KOH, for n-GaN is as high as 1600 Å/min at a Hg-illumination intensity of 35 mW/cm 2. The fabricated GaN MESFET exhibited a current saturation at V ds = 10 V and a pinch-off at V gs = -3 V. The peak drain current of the device was about 25 mA/mm at 300 K, and the value remained almost same for 500 K operation. The insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and to the band-bending at the subgrain boundaries in GaN thin films.

AB - A new photoelectrochemical etching method was developed and employed for the fabrication of GaN metal-semiconductor field effect transistors (MESFETs). The unique etching process utilizes a photoresistive mask and a KOH-based etchant. The etching rate of the etchant, with 1.0 mol% of KOH, for n-GaN is as high as 1600 Å/min at a Hg-illumination intensity of 35 mW/cm 2. The fabricated GaN MESFET exhibited a current saturation at V ds = 10 V and a pinch-off at V gs = -3 V. The peak drain current of the device was about 25 mA/mm at 300 K, and the value remained almost same for 500 K operation. The insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and to the band-bending at the subgrain boundaries in GaN thin films.

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