A new repair scheme for TSV-based 3D memory using base die repair cells

Donghyun Han, Hayoung Lee, Donghyun Kim, Sungho Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a new repair scheme which consists of a new repair algorithm and a base die structure of TSV based 3D memory is proposed. The traditional repair process in 3D memory uses extra cells in each memory layer. This paper proposes a new redundancy cell structure for repairing memory layers using spare cells on the base die which consists of solution memory, spare CAM and a control structure. The experimental results show that the repair rate of the new repair scheme is better than that of the inter-die method.

Original languageEnglish
Title of host publicationProceedings - International SoC Design Conference 2017, ISOCC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages11-12
Number of pages2
ISBN (Electronic)9781538622858
DOIs
Publication statusPublished - 2018 May 29
Event14th International SoC Design Conference, ISOCC 2017 - Seoul, Korea, Republic of
Duration: 2017 Nov 52017 Nov 8

Publication series

NameProceedings - International SoC Design Conference 2017, ISOCC 2017

Other

Other14th International SoC Design Conference, ISOCC 2017
CountryKorea, Republic of
CitySeoul
Period17/11/517/11/8

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Han, D., Lee, H., Kim, D., & Kang, S. (2018). A new repair scheme for TSV-based 3D memory using base die repair cells. In Proceedings - International SoC Design Conference 2017, ISOCC 2017 (pp. 11-12). (Proceedings - International SoC Design Conference 2017, ISOCC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC.2017.8368804