A new repair scheme for TSV-based 3D memory using base die repair cells

Donghyun Han, Hayoung Lee, Donghyun Kim, Sungho Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a new repair scheme which consists of a new repair algorithm and a base die structure of TSV based 3D memory is proposed. The traditional repair process in 3D memory uses extra cells in each memory layer. This paper proposes a new redundancy cell structure for repairing memory layers using spare cells on the base die which consists of solution memory, spare CAM and a control structure. The experimental results show that the repair rate of the new repair scheme is better than that of the inter-die method.

Original languageEnglish
Title of host publicationProceedings - International SoC Design Conference 2017, ISOCC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages11-12
Number of pages2
ISBN (Electronic)9781538622858
DOIs
Publication statusPublished - 2018 May 29
Event14th International SoC Design Conference, ISOCC 2017 - Seoul, Korea, Republic of
Duration: 2017 Nov 52017 Nov 8

Publication series

NameProceedings - International SoC Design Conference 2017, ISOCC 2017

Other

Other14th International SoC Design Conference, ISOCC 2017
CountryKorea, Republic of
CitySeoul
Period17/11/517/11/8

Fingerprint

Repair
Data storage equipment
Computer aided manufacturing
Redundancy

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Han, D., Lee, H., Kim, D., & Kang, S. (2018). A new repair scheme for TSV-based 3D memory using base die repair cells. In Proceedings - International SoC Design Conference 2017, ISOCC 2017 (pp. 11-12). (Proceedings - International SoC Design Conference 2017, ISOCC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC.2017.8368804
Han, Donghyun ; Lee, Hayoung ; Kim, Donghyun ; Kang, Sungho. / A new repair scheme for TSV-based 3D memory using base die repair cells. Proceedings - International SoC Design Conference 2017, ISOCC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 11-12 (Proceedings - International SoC Design Conference 2017, ISOCC 2017).
@inproceedings{fd82133dbf69491cb22601f461685567,
title = "A new repair scheme for TSV-based 3D memory using base die repair cells",
abstract = "In this paper, a new repair scheme which consists of a new repair algorithm and a base die structure of TSV based 3D memory is proposed. The traditional repair process in 3D memory uses extra cells in each memory layer. This paper proposes a new redundancy cell structure for repairing memory layers using spare cells on the base die which consists of solution memory, spare CAM and a control structure. The experimental results show that the repair rate of the new repair scheme is better than that of the inter-die method.",
author = "Donghyun Han and Hayoung Lee and Donghyun Kim and Sungho Kang",
year = "2018",
month = "5",
day = "29",
doi = "10.1109/ISOCC.2017.8368804",
language = "English",
series = "Proceedings - International SoC Design Conference 2017, ISOCC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "11--12",
booktitle = "Proceedings - International SoC Design Conference 2017, ISOCC 2017",
address = "United States",

}

Han, D, Lee, H, Kim, D & Kang, S 2018, A new repair scheme for TSV-based 3D memory using base die repair cells. in Proceedings - International SoC Design Conference 2017, ISOCC 2017. Proceedings - International SoC Design Conference 2017, ISOCC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 11-12, 14th International SoC Design Conference, ISOCC 2017, Seoul, Korea, Republic of, 17/11/5. https://doi.org/10.1109/ISOCC.2017.8368804

A new repair scheme for TSV-based 3D memory using base die repair cells. / Han, Donghyun; Lee, Hayoung; Kim, Donghyun; Kang, Sungho.

Proceedings - International SoC Design Conference 2017, ISOCC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 11-12 (Proceedings - International SoC Design Conference 2017, ISOCC 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A new repair scheme for TSV-based 3D memory using base die repair cells

AU - Han, Donghyun

AU - Lee, Hayoung

AU - Kim, Donghyun

AU - Kang, Sungho

PY - 2018/5/29

Y1 - 2018/5/29

N2 - In this paper, a new repair scheme which consists of a new repair algorithm and a base die structure of TSV based 3D memory is proposed. The traditional repair process in 3D memory uses extra cells in each memory layer. This paper proposes a new redundancy cell structure for repairing memory layers using spare cells on the base die which consists of solution memory, spare CAM and a control structure. The experimental results show that the repair rate of the new repair scheme is better than that of the inter-die method.

AB - In this paper, a new repair scheme which consists of a new repair algorithm and a base die structure of TSV based 3D memory is proposed. The traditional repair process in 3D memory uses extra cells in each memory layer. This paper proposes a new redundancy cell structure for repairing memory layers using spare cells on the base die which consists of solution memory, spare CAM and a control structure. The experimental results show that the repair rate of the new repair scheme is better than that of the inter-die method.

UR - http://www.scopus.com/inward/record.url?scp=85048877016&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048877016&partnerID=8YFLogxK

U2 - 10.1109/ISOCC.2017.8368804

DO - 10.1109/ISOCC.2017.8368804

M3 - Conference contribution

AN - SCOPUS:85048877016

T3 - Proceedings - International SoC Design Conference 2017, ISOCC 2017

SP - 11

EP - 12

BT - Proceedings - International SoC Design Conference 2017, ISOCC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Han D, Lee H, Kim D, Kang S. A new repair scheme for TSV-based 3D memory using base die repair cells. In Proceedings - International SoC Design Conference 2017, ISOCC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 11-12. (Proceedings - International SoC Design Conference 2017, ISOCC 2017). https://doi.org/10.1109/ISOCC.2017.8368804