A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3

Hong Sub Lee, Sun Gyu Choi, Hyung Ho Park, M. J. Rozenberg

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr 0.7 Ca0.3 MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.

Original languageEnglish
Article number1704
JournalScientific reports
Volume3
DOIs
Publication statusPublished - 2013 May 20

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Oxides
Metals
Oxygen
Superconductivity

All Science Journal Classification (ASJC) codes

  • General

Cite this

@article{daa82a48cdc04ede906ae44da8df0c03,
title = "A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3",
abstract = "Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr 0.7 Ca0.3 MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.",
author = "Lee, {Hong Sub} and Choi, {Sun Gyu} and Park, {Hyung Ho} and Rozenberg, {M. J.}",
year = "2013",
month = "5",
day = "20",
doi = "10.1038/srep01704",
language = "English",
volume = "3",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

A new route to the Mott-Hubbard metal-insulator transition : Strong correlations effects in Pr0.7 Ca0.3 MnO3. / Lee, Hong Sub; Choi, Sun Gyu; Park, Hyung Ho; Rozenberg, M. J.

In: Scientific reports, Vol. 3, 1704, 20.05.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A new route to the Mott-Hubbard metal-insulator transition

T2 - Strong correlations effects in Pr0.7 Ca0.3 MnO3

AU - Lee, Hong Sub

AU - Choi, Sun Gyu

AU - Park, Hyung Ho

AU - Rozenberg, M. J.

PY - 2013/5/20

Y1 - 2013/5/20

N2 - Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr 0.7 Ca0.3 MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.

AB - Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr 0.7 Ca0.3 MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.

UR - http://www.scopus.com/inward/record.url?scp=84877771776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877771776&partnerID=8YFLogxK

U2 - 10.1038/srep01704

DO - 10.1038/srep01704

M3 - Article

C2 - 23609181

AN - SCOPUS:84877771776

VL - 3

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 1704

ER -