A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment

Byeong Yun Oh, Ji Hun Lim, Kang Min Lee, Young Hwan Kim, Byoung Yong Kim, Jeong Min Han, Sang Keuk Lee, Dae Shik Seo, Jeong Yeon Hwang

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Abstract

This paper describes a no-bias-bend (NBB) π cell based on a homeotropic polyimide layer with a midrange pretilt angle produced using the nonrubbing ion-beam (IB) method. Various pretilt angles in the range 1-89° were easily achieved depending on the IB exposure time. A chemical structure analysis confirmed that preferential reorientation of the carbon network was created by selectively breaking the weakest π bonds of the CO double bonds. The threshold voltage and favorable response time of the NBB π cell without an initial critical voltage were 0.7 V and 6.6 ms.

Original languageEnglish
Pages (from-to)H331-H334
JournalElectrochemical and Solid-State Letters
Volume11
Issue number12
DOIs
Publication statusPublished - 2008 Nov 3

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Oh, B. Y., Lim, J. H., Lee, K. M., Kim, Y. H., Kim, B. Y., Han, J. M., Lee, S. K., Seo, D. S., & Hwang, J. Y. (2008). A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment. Electrochemical and Solid-State Letters, 11(12), H331-H334. https://doi.org/10.1149/1.2990221