A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment

Byeong Yun Oh, Ji Hun Lim, Kang Min Lee, Young Hwan Kim, Byoung Yong Kim, Jeong Min Han, Sang Keuk Lee, Dae-Shik Seo, Jeong Yeon Hwang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This paper describes a no-bias-bend (NBB) π cell based on a homeotropic polyimide layer with a midrange pretilt angle produced using the nonrubbing ion-beam (IB) method. Various pretilt angles in the range 1-89° were easily achieved depending on the IB exposure time. A chemical structure analysis confirmed that preferential reorientation of the carbon network was created by selectively breaking the weakest π bonds of the CO double bonds. The threshold voltage and favorable response time of the NBB π cell without an initial critical voltage were 0.7 V and 6.6 ms.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number12
DOIs
Publication statusPublished - 2008 Nov 3

Fingerprint

Liquid crystal displays
Ion beams
bombardment
ion beams
Carbon Monoxide
cells
Threshold voltage
polyimides
Polyimides
threshold voltage
retraining
Carbon
carbon
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Oh, B. Y., Lim, J. H., Lee, K. M., Kim, Y. H., Kim, B. Y., Han, J. M., ... Hwang, J. Y. (2008). A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment. Electrochemical and Solid-State Letters, 11(12). https://doi.org/10.1149/1.2990221
Oh, Byeong Yun ; Lim, Ji Hun ; Lee, Kang Min ; Kim, Young Hwan ; Kim, Byoung Yong ; Han, Jeong Min ; Lee, Sang Keuk ; Seo, Dae-Shik ; Hwang, Jeong Yeon. / A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment. In: Electrochemical and Solid-State Letters. 2008 ; Vol. 11, No. 12.
@article{90671e6356d14f479c6df7daa7981e94,
title = "A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment",
abstract = "This paper describes a no-bias-bend (NBB) π cell based on a homeotropic polyimide layer with a midrange pretilt angle produced using the nonrubbing ion-beam (IB) method. Various pretilt angles in the range 1-89° were easily achieved depending on the IB exposure time. A chemical structure analysis confirmed that preferential reorientation of the carbon network was created by selectively breaking the weakest π bonds of the CO double bonds. The threshold voltage and favorable response time of the NBB π cell without an initial critical voltage were 0.7 V and 6.6 ms.",
author = "Oh, {Byeong Yun} and Lim, {Ji Hun} and Lee, {Kang Min} and Kim, {Young Hwan} and Kim, {Byoung Yong} and Han, {Jeong Min} and Lee, {Sang Keuk} and Dae-Shik Seo and Hwang, {Jeong Yeon}",
year = "2008",
month = "11",
day = "3",
doi = "10.1149/1.2990221",
language = "English",
volume = "11",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "12",

}

A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment. / Oh, Byeong Yun; Lim, Ji Hun; Lee, Kang Min; Kim, Young Hwan; Kim, Byoung Yong; Han, Jeong Min; Lee, Sang Keuk; Seo, Dae-Shik; Hwang, Jeong Yeon.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 12, 03.11.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment

AU - Oh, Byeong Yun

AU - Lim, Ji Hun

AU - Lee, Kang Min

AU - Kim, Young Hwan

AU - Kim, Byoung Yong

AU - Han, Jeong Min

AU - Lee, Sang Keuk

AU - Seo, Dae-Shik

AU - Hwang, Jeong Yeon

PY - 2008/11/3

Y1 - 2008/11/3

N2 - This paper describes a no-bias-bend (NBB) π cell based on a homeotropic polyimide layer with a midrange pretilt angle produced using the nonrubbing ion-beam (IB) method. Various pretilt angles in the range 1-89° were easily achieved depending on the IB exposure time. A chemical structure analysis confirmed that preferential reorientation of the carbon network was created by selectively breaking the weakest π bonds of the CO double bonds. The threshold voltage and favorable response time of the NBB π cell without an initial critical voltage were 0.7 V and 6.6 ms.

AB - This paper describes a no-bias-bend (NBB) π cell based on a homeotropic polyimide layer with a midrange pretilt angle produced using the nonrubbing ion-beam (IB) method. Various pretilt angles in the range 1-89° were easily achieved depending on the IB exposure time. A chemical structure analysis confirmed that preferential reorientation of the carbon network was created by selectively breaking the weakest π bonds of the CO double bonds. The threshold voltage and favorable response time of the NBB π cell without an initial critical voltage were 0.7 V and 6.6 ms.

UR - http://www.scopus.com/inward/record.url?scp=54949113312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54949113312&partnerID=8YFLogxK

U2 - 10.1149/1.2990221

DO - 10.1149/1.2990221

M3 - Article

VL - 11

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 12

ER -