A non-volatile buffered main memory using phase-change RAM

Do Heon Lee, Chung Pyo Hong, Shin-Dug Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The new trends of memory semi-conductor technology are changing and developing. Phase-Change RAM (PRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM) and Resistive RAM (RRAM) are going to take center stage of main memory material of new computer systems in next decade. PRAM also has higher dense, it can keep data about four times more than DRAM. But some problems caused when PRAM uses as a main memory directly. So we suggest Pre-load cache and Assistant buffer. It reduces main memory access and overcome low read speed of PRAM consequently. To reduce write operation also, we propose Assistant buffer. Assistant buffer keeps evicted data and impedes write operation, and facilitates more rapid response about required data when cache misses. As a result of our experimentation, overall performance is decrement of main memory accesses approximately 50 %.

Original languageEnglish
Title of host publicationIT Convergence and Security 2012
Pages433-439
Number of pages7
DOIs
Publication statusPublished - 2013 Feb 26
EventInternational Conference on IT Convergence and Security, ICITCS 2012 - Pyeong Chang, Korea, Republic of
Duration: 2012 Dec 52012 Dec 7

Publication series

NameLecture Notes in Electrical Engineering
Volume215 LNEE
ISSN (Print)1876-1100
ISSN (Electronic)1876-1119

Other

OtherInternational Conference on IT Convergence and Security, ICITCS 2012
CountryKorea, Republic of
CityPyeong Chang
Period12/12/512/12/7

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All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering

Cite this

Lee, D. H., Hong, C. P., & Kim, S-D. (2013). A non-volatile buffered main memory using phase-change RAM. In IT Convergence and Security 2012 (pp. 433-439). (Lecture Notes in Electrical Engineering; Vol. 215 LNEE). https://doi.org/10.1007/978-94-007-5860-5_53