A novel amorphous InGaZnO thin film transistor structure without source/drain layer deposition

Byung Du Ahn, Hyun Soo Shin, Gun Hee Kim, Jin Seong Park, Heon Je Kim

Research output: Contribution to journalArticle

46 Citations (Scopus)
Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume48
Issue number3
Publication statusPublished - 2009 Mar

Cite this

Ahn, Byung Du ; Shin, Hyun Soo ; Kim, Gun Hee ; Park, Jin Seong ; Kim, Heon Je. / A novel amorphous InGaZnO thin film transistor structure without source/drain layer deposition. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 3.
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author = "Ahn, {Byung Du} and Shin, {Hyun Soo} and Kim, {Gun Hee} and Park, {Jin Seong} and Kim, {Heon Je}",
year = "2009",
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language = "English",
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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
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A novel amorphous InGaZnO thin film transistor structure without source/drain layer deposition. / Ahn, Byung Du; Shin, Hyun Soo; Kim, Gun Hee; Park, Jin Seong; Kim, Heon Je.

In: Japanese Journal of Applied Physics, Vol. 48, No. 3, 03.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A novel amorphous InGaZnO thin film transistor structure without source/drain layer deposition

AU - Ahn, Byung Du

AU - Shin, Hyun Soo

AU - Kim, Gun Hee

AU - Park, Jin Seong

AU - Kim, Heon Je

PY - 2009/3

Y1 - 2009/3

M3 - Article

VL - 48

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3

ER -