A novel CPW structure for high-speed interconnects

S. J. Yoon, S. H. Jeong, J. G. Yook, Y. J. Kim, S. G. Lee, O. K. Seo, K. S. Lim, D. S. Kim

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

For high-speed digital circuits a novel elevated-CPW (ECPW) structure with low loss and low dispersion is proposed and the performances are well compared with the theoretical prediction. The ECPW is designed with the aid of time domain fullwave FDTD technique and is fabricated using conventional thick-film MEMS processing. Proposed structure reveal at least 10dB lower insertion loss compared to conventional CPW geometries and effective permittivity is 4 to 6 times smaller than that of conventional CPW. Characteristic impedances and effective permittivities are given for various geometrical parameters.

Original languageEnglish
Pages (from-to)771-774
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
DOIs
Publication statusPublished - 2001 Jan 1

Fingerprint

Permittivity
high speed
permittivity
digital electronics
Digital circuits
Insertion losses
finite difference time domain method
Thick films
insertion loss
microelectromechanical systems
MEMS
thick films
impedance
Geometry
Processing
geometry
predictions

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Yoon, S. J. ; Jeong, S. H. ; Yook, J. G. ; Kim, Y. J. ; Lee, S. G. ; Seo, O. K. ; Lim, K. S. ; Kim, D. S. / A novel CPW structure for high-speed interconnects. In: IEEE MTT-S International Microwave Symposium Digest. 2001 ; Vol. 2. pp. 771-774.
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A novel CPW structure for high-speed interconnects. / Yoon, S. J.; Jeong, S. H.; Yook, J. G.; Kim, Y. J.; Lee, S. G.; Seo, O. K.; Lim, K. S.; Kim, D. S.

In: IEEE MTT-S International Microwave Symposium Digest, Vol. 2, 01.01.2001, p. 771-774.

Research output: Contribution to journalArticle

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AU - Yoon, S. J.

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