A novel method to dope silicon nanowires with Er ions

Lingling Ren, Heon Jin Choi, Won Young Jeung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A novel method was applied to grow silicon nanowires (Si-NWs) doped with Er ions. At first the gold nanoparticles were sputtered to clean Si (100) surfaces, they were then coated with Si or Al source sol-gel solutions. Finally, the Si-NWs grew by a vapor-liquid-solid (VLS) mechanism, at the same time, the coating layers were sintered to oxide layers. This method was easy and lessened energy consumes. The oxide-doping layer was so thin that our eyes cannot observe it.

Original languageEnglish
Pages (from-to)332-335
Number of pages4
JournalJournal of Ceramic Processing Research
Volume7
Issue number4
Publication statusPublished - 2006 Dec 1

Fingerprint

Silicon
Oxides
Nanowires
Ions
Gold
Sol-gels
Vapors
Doping (additives)
Nanoparticles
Coatings
Liquids

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

Ren, Lingling ; Choi, Heon Jin ; Jeung, Won Young. / A novel method to dope silicon nanowires with Er ions. In: Journal of Ceramic Processing Research. 2006 ; Vol. 7, No. 4. pp. 332-335.
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A novel method to dope silicon nanowires with Er ions. / Ren, Lingling; Choi, Heon Jin; Jeung, Won Young.

In: Journal of Ceramic Processing Research, Vol. 7, No. 4, 01.12.2006, p. 332-335.

Research output: Contribution to journalArticle

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