A novel robust TiN/AHO/TiN capacitor and CoSi2 cell pad structure for 70 nm stand-alone and embedded DRAM technology and beyond

J. M. Park; Y. S. Hwang; D. S. Hwang; H. K. Hwang; S. H. Lee; G. Y. Kim; M. Y. Jeong; B. J. Park; S. E. Kim; M. H. Cho; D. I. Kim; J. H. Chung; I. S. Park; C. Y. Yoo; J. H. Lee; B. Y. Nam; Y. R. Park; C. S. Kim; M. C. Sun; J. H. Ku; S. Choi; H. S. Kim; Y. G. Park; Kinam Kim

A novel robust TiN/AHO/TiN capacitor and CoSi₂ cell pad structure for 70 nm stand-alone and embedded DRAM technology and beyond

J. M. Park, Y. S. Hwang, D. S. Hwang, H. K. Hwang, S. H. Lee, G. Y. Kim, M. Y. Jeong, B. J. Park, S. E. Kim, M. H. Cho, D. I. Kim, J. H. Chung, I. S. Park, C. Y. Yoo, J. H. Lee, B. Y. Nam, Y. R. Park, C. S. Kim, M. C. Sun, J. H. KuS. Choi, H. S. Kim, Y. G. Park, Kinam Kim

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

For the first time, a novel robust (square-shape cylinder type) TiN/AHO (Al ₂O₃-HfO₂) /TiN capacitor with Co-silicide on landing cell pad suitable for both stand-alone and embedded DRAMs are successfully developed with 88nm (pitch 176nm) feature size, which is the smallest feature size ever reported in DRAM technology, using ArF lithography for aiming 70nm stand-alone and embedded DRAM technology. The capacitor with Toxeq of 1.5nm and leakage current of less than 1fA/cell is achieved. The cell contact resistance is greatly improved by using Co-silicidation on landing cell pad and metal storage node contact plug, which results in high performance.

Original language	English
Pages (from-to)	823-826
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2002
Event	2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States Duration: 2002 Dec 8 → 2002 Dec 11

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

Park, J. M., Hwang, Y. S., Hwang, D. S., Hwang, H. K., Lee, S. H., Kim, G. Y., Jeong, M. Y., Park, B. J., Kim, S. E., Cho, M. H., Kim, D. I., Chung, J. H., Park, I. S., Yoo, C. Y., Lee, J. H., Nam, B. Y., Park, Y. R., Kim, C. S., Sun, M. C., ... Kim, K. (2002). A novel robust TiN/AHO/TiN capacitor and CoSi₂ cell pad structure for 70 nm stand-alone and embedded DRAM technology and beyond. Technical Digest - International Electron Devices Meeting, 823-826.

@article{f64804af6d764e35a1aa72f951122ee8,

title = "A novel robust TiN/AHO/TiN capacitor and CoSi2 cell pad structure for 70 nm stand-alone and embedded DRAM technology and beyond",

abstract = "For the first time, a novel robust (square-shape cylinder type) TiN/AHO (Al 2O3-HfO2) /TiN capacitor with Co-silicide on landing cell pad suitable for both stand-alone and embedded DRAMs are successfully developed with 88nm (pitch 176nm) feature size, which is the smallest feature size ever reported in DRAM technology, using ArF lithography for aiming 70nm stand-alone and embedded DRAM technology. The capacitor with Toxeq of 1.5nm and leakage current of less than 1fA/cell is achieved. The cell contact resistance is greatly improved by using Co-silicidation on landing cell pad and metal storage node contact plug, which results in high performance.",

author = "Park, {J. M.} and Hwang, {Y. S.} and Hwang, {D. S.} and Hwang, {H. K.} and Lee, {S. H.} and Kim, {G. Y.} and Jeong, {M. Y.} and Park, {B. J.} and Kim, {S. E.} and Cho, {M. H.} and Kim, {D. I.} and Chung, {J. H.} and Park, {I. S.} and Yoo, {C. Y.} and Lee, {J. H.} and Nam, {B. Y.} and Park, {Y. R.} and Kim, {C. S.} and Sun, {M. C.} and Ku, {J. H.} and S. Choi and Kim, {H. S.} and Park, {Y. G.} and Kinam Kim",

year = "2002",

language = "English",

pages = "823--826",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Devices Meeting (IEDM) ; Conference date: 08-12-2002 Through 11-12-2002",

}

Park, JM, Hwang, YS, Hwang, DS, Hwang, HK, Lee, SH, Kim, GY, Jeong, MY, Park, BJ, Kim, SE, Cho, MH, Kim, DI, Chung, JH, Park, IS, Yoo, CY, Lee, JH, Nam, BY, Park, YR, Kim, CS, Sun, MC, Ku, JH, Choi, S, Kim, HS, Park, YG & Kim, K 2002, 'A novel robust TiN/AHO/TiN capacitor and CoSi₂ cell pad structure for 70 nm stand-alone and embedded DRAM technology and beyond', Technical Digest - International Electron Devices Meeting, pp. 823-826.

TY - JOUR

T1 - A novel robust TiN/AHO/TiN capacitor and CoSi2 cell pad structure for 70 nm stand-alone and embedded DRAM technology and beyond

AU - Park, J. M.

AU - Hwang, Y. S.

AU - Hwang, D. S.

AU - Hwang, H. K.

AU - Lee, S. H.

AU - Kim, G. Y.

AU - Jeong, M. Y.

AU - Park, B. J.

AU - Kim, S. E.

AU - Cho, M. H.

AU - Kim, D. I.

AU - Chung, J. H.

AU - Park, I. S.

AU - Yoo, C. Y.

AU - Lee, J. H.

AU - Nam, B. Y.

AU - Park, Y. R.

AU - Kim, C. S.

AU - Sun, M. C.

AU - Ku, J. H.

AU - Choi, S.

AU - Kim, H. S.

AU - Park, Y. G.

AU - Kim, Kinam

PY - 2002

Y1 - 2002

N2 - For the first time, a novel robust (square-shape cylinder type) TiN/AHO (Al 2O3-HfO2) /TiN capacitor with Co-silicide on landing cell pad suitable for both stand-alone and embedded DRAMs are successfully developed with 88nm (pitch 176nm) feature size, which is the smallest feature size ever reported in DRAM technology, using ArF lithography for aiming 70nm stand-alone and embedded DRAM technology. The capacitor with Toxeq of 1.5nm and leakage current of less than 1fA/cell is achieved. The cell contact resistance is greatly improved by using Co-silicidation on landing cell pad and metal storage node contact plug, which results in high performance.

AB - For the first time, a novel robust (square-shape cylinder type) TiN/AHO (Al 2O3-HfO2) /TiN capacitor with Co-silicide on landing cell pad suitable for both stand-alone and embedded DRAMs are successfully developed with 88nm (pitch 176nm) feature size, which is the smallest feature size ever reported in DRAM technology, using ArF lithography for aiming 70nm stand-alone and embedded DRAM technology. The capacitor with Toxeq of 1.5nm and leakage current of less than 1fA/cell is achieved. The cell contact resistance is greatly improved by using Co-silicidation on landing cell pad and metal storage node contact plug, which results in high performance.

UR - http://www.scopus.com/inward/record.url?scp=0036927923&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036927923&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036927923

SN - 0163-1918

SP - 823

EP - 826

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2002 IEEE International Devices Meeting (IEDM)

Y2 - 8 December 2002 through 11 December 2002

ER -

A novel robust TiN/AHO/TiN capacitor and CoSi₂ cell pad structure for 70 nm stand-alone and embedded DRAM technology and beyond

Abstract

All Science Journal Classification (ASJC) codes

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