A novel robust TiN/AHO/TiN capacitor and CoSi2 cell pad structure for 70 nm stand-alone and embedded DRAM technology and beyond

J. M. Park, Y. S. Hwang, D. S. Hwang, H. K. Hwang, S. H. Lee, G. Y. Kim, M. Y. Jeong, B. J. Park, S. E. Kim, M. H. Cho, D. I. Kim, J. H. Chung, I. S. Park, C. Y. Yoo, J. H. Lee, B. Y. Nam, Y. R. Park, C. S. Kim, M. C. Sun, J. H. KuS. Choi, H. S. Kim, Y. G. Park, Kinam Kim

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


For the first time, a novel robust (square-shape cylinder type) TiN/AHO (Al 2O3-HfO2) /TiN capacitor with Co-silicide on landing cell pad suitable for both stand-alone and embedded DRAMs are successfully developed with 88nm (pitch 176nm) feature size, which is the smallest feature size ever reported in DRAM technology, using ArF lithography for aiming 70nm stand-alone and embedded DRAM technology. The capacitor with Toxeq of 1.5nm and leakage current of less than 1fA/cell is achieved. The cell contact resistance is greatly improved by using Co-silicidation on landing cell pad and metal storage node contact plug, which results in high performance.

Original languageEnglish
Pages (from-to)823-826
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2002
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 2002 Dec 82002 Dec 11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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