A numerical study on the mechanical characteristics of zinc oxide-based transparent thin film transistors

D. K. Lee, K. Park, J. H. Ahn, N. E. Lee, Y. J. Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Zinc Oxide (ZnO) based Thin Film Transistors (TFTs) have been fabricated and analyzed to investigate mechanical characteristics regarding the stress, strain and deformation of electro circuits using the Finite Element Method (FEM). As the best compromise between the stretching and bending abilities, the coating thickness of SU-8 can be as important for bendability as a neutral mechanical plane. The neutral mechanical plane in electro circuits was designed for obtaining flexibility, e.g., bendability, in a previous numerical study. After that, through experimental validation, we observed what degree of SU-8 thickness was attributable for improved mechanical stability. The results suggest that not only numerical but also experimental measurements of the deformation and SU-8 coating thickness in electro circuits are useful for enhancing structural stability.

Original languageEnglish
Pages (from-to)5870-5875
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number7
DOIs
Publication statusPublished - 2011 Jul 1

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Zinc Oxide

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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A numerical study on the mechanical characteristics of zinc oxide-based transparent thin film transistors. / Lee, D. K.; Park, K.; Ahn, J. H.; Lee, N. E.; Kim, Y. J.

In: Journal of Nanoscience and Nanotechnology, Vol. 11, No. 7, 01.07.2011, p. 5870-5875.

Research output: Contribution to journalArticle

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