Recently, two-dimensional (2D) materials have attracted great attention from researchers to overcome the limitations of conventional semiconductor materials. Specifically, 2D materials offer great advantages for low power consumption and robust endurance, which are required to achieve the key characteristics of non-volatile memory. Herein, we introduce a pentagonal 2D layered PdSe2 channel-based floating gate memory with a positive threshold voltage, which can potentially enable the device to be turned off around zero gate bias to reduce power consumption, and observe a multi-bit conductance state with reliable retention time. We demonstrated 64 levels of conductance states to mimic synaptic weight behaviors with only using positive voltage pulses. An artificial neural network emulation based on our device demonstrated a high handwritten digit recognition accuracy of ∼90%. In addition, one of the popular biological learning rules, spike-timing-dependent plasticity (STDP), was successfully realized in the device with identical triangular-shaped pulses by applying them separately. The experimental results from our device suggest promising potential for use in the field of non-volatile memory devices and in neuromorphic systems.
|Number of pages||10|
|Journal||Journal of Materials Chemistry C|
|Publication status||Published - 2022 Oct 17|
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) (grant no. 2021M3F3A2A01037738), the Institute of Information & Communications Technology Planning & Evaluation (IITP) (grant no. 2021001776) and the Korea Institute of Science and Technology (KIST) through 2E31550.
© 2022 The Royal Society of Chemistry.
All Science Journal Classification (ASJC) codes
- Materials Chemistry