Abstract
Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication.
Original language | English |
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Pages (from-to) | 2746-2752 |
Number of pages | 7 |
Journal | Advanced Materials |
Volume | 25 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2013 May 21 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering