A precision DTMOST-based temperature sensor

Kamran Souri, Youngcheol Chae, Youri Ponomarev, Kofi A.A. Makinwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

This paper describes a precision temperature sensor based on dynamic threshold MOS (DTMOS) transistors. By using the DTMOS configuration, i.e. by connecting the body of a MOSFET to its gate, a near-ideal diode characteristic can be realized. The resulting device can then replace the substrate PNP used in most precision temperature sensors. After a two-temperature trim, the proposed sensor achieves an inaccuracy of ±0.1°C (3σ) over the military temperature range: -55°C to 125°C. This represents a 5x improvement in accuracy over previously reported MOSFET-based temperature sensors. The chip was implemented in a 0.16-μm standard CMOS process. At a conversion rate of 5Hz, it achieves a resolution of 33mK, while dissipating only 8.6 μW from a 1.8V supply.

Original languageEnglish
Title of host publicationESSCIRC 2011 - Proceedings of the 37th European Solid-State Circuits Conference
Pages279-282
Number of pages4
DOIs
Publication statusPublished - 2011
Event37th European Solid-State Circuits Conference, ESSCIRC 2011 - Helsinki, Finland
Duration: 2011 Sep 122011 Sep 16

Publication series

NameEuropean Solid-State Circuits Conference
ISSN (Print)1930-8833

Other

Other37th European Solid-State Circuits Conference, ESSCIRC 2011
CountryFinland
CityHelsinki
Period11/9/1211/9/16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Souri, K., Chae, Y., Ponomarev, Y., & Makinwa, K. A. A. (2011). A precision DTMOST-based temperature sensor. In ESSCIRC 2011 - Proceedings of the 37th European Solid-State Circuits Conference (pp. 279-282). [6044961] (European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2011.6044961