The fabrication of free-standing micro- and nanoscale objects of single crystal silicon from silicon-on-insulator wafers by lithographic patterning of resist was investigated. It is observed that large collection of such objects constitutes a type of material which could be deposited and patterned using dry transfer printing. The effective mobilities of devices built with this material known as microstructured silicon are also demonstrated to be as high as 180 cm 2/V on plastic substrates. The results show that 'top down' microtechnology represents an attractive route to high performance flexible electronic systems.
Bibliographical noteFunding Information:
We thank M. Kane for useful discussions. The work was partially supported by the Defense Advanced Projects Agency and by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. D.-Y.K. thanks the Korea Science and Engineering Foundation (KOSEF) for post-doctoral fellowship support.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)