A printable form of single crystal silicon for high performance thin film transistors on plastic

E. Menard, D. Y. Khang, K. Lee, R. Nuzzo, J. A. Rogers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The fabrication and electrical characteristics of high performance thin film transistors derived from printed and solution cast micro/nanoscale objects of single crystal silicon were discussed. These elements were fabricated from conventional bulk silicon substrates or from silicon-on-insulator wafers by patterning a layer of resist by soft lithography, anisotropically wet etching the exposed silicon and then lifting off the silicon. It was observed that the processing techniques enable extremely smooth, single crystal facets and uniform shapes. The results show that fabricating electrodes on top of these elements yield a type of thin film transistor that can have good electrical properties.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages127-128
Number of pages2
DOIs
Publication statusPublished - 2004 Dec 1
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: 2004 Jun 212004 Jun 23

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period04/6/2104/6/23

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Menard, E., Khang, D. Y., Lee, K., Nuzzo, R., & Rogers, J. A. (2004). A printable form of single crystal silicon for high performance thin film transistors on plastic. In Device Research Conference - Conference Digest, 62nd DRC (pp. 127-128). [III.-38] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367816