This study examined the properties of Schottky-type diodes composed of Pt/TiO2/Ti, where the Pt/TiO2 and TiO2/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of ∼ 109 was achieved at 1V when the TiO2 film thickness was 19nm. TiO2 film was grown by atomic layer deposition at a substrate temperature of 250 °C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to < 10Acm-2 for a large electrode (an area of ∼ 60 000νm2). However, the local current measurement showed a local forward current density as high as ∼ 105Acm-2. Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.
|Publication status||Published - 2010|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering