A read voltage modulation technique for leakage current compensation in cross-point OTS-PRAM

Kwang Woo Lee, Hyun Kook Park, Seong Ook Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, a read voltage modulation technique (RVM) is proposed to compensate for leakage current in a cross-point phase change random access memory with an ovonic threshold switch (OTS-PRAM). The leakage current, the sum of off-state current (IOFF) of OTS selectors, causes the voltage drop and increases the variation of sensing voltage (VSENSE) which is the electric potential difference between a selected bit line (BL) and a word line (WL). Eventually, the voltage drop reduces the sensing margin (SM). To compensate for the BL voltage drop, the proposed RVM reduces the VSENSE variation by applying an adaptive voltage to the selected WL. Thus, a sufficient SM is guaranteed. HSPICE simulation results with industry-compatible 65-nm model parameters show that the cross-point OTS-PRAM with the proposed RVM achieved a remarkable improvement in SM (from 105 mV to 395 mV) in high BL leakage current condition (51.3 uA).

Original languageEnglish
Title of host publication2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728133201
Publication statusPublished - 2020
Event52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Virtual, Online
Duration: 2020 Oct 102020 Oct 21

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2020-October
ISSN (Print)0271-4310

Conference

Conference52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020
CityVirtual, Online
Period20/10/1020/10/21

Bibliographical note

Publisher Copyright:
© 2020 IEEE

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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