A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices

Jin Young Kim, Sang Hoon Park, Hyeokjun Seo, Taehee You, Eui Young Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Recently, Phase-change RAMs (PRAMs) are considered to be as a good candidate that can substitute as DRAM cache buffers (CBs) in NAND flash-based storage devices (NFSDs). PRAM is an adequate device to mobile consumer electronics thanks to low static power consumption, high density and non-volatility. However, in spite of many advantages over DRAM, asymmetric write/read speed of PRAM causes performance degradation in NFSD. In this paper, hence, we first propose a novel scheduling method for an NFSD with PRAM CB utilizing read-while-write (RWW) of PRAM. The method schedules NFSD's requests to service read and write simultaneously using RWW. In the experiment result, the proposed method reduces read and write latency on average by 30% and 19%, respectively.

Original languageEnglish
Title of host publicationISCE 2014 - 18th IEEE International Symposium on Consumer Electronics
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479945924
DOIs
Publication statusPublished - 2014 Jan 1
Event18th IEEE International Symposium on Consumer Electronics, ISCE 2014 - Jeju, Korea, Republic of
Duration: 2014 Jun 222014 Jun 25

Other

Other18th IEEE International Symposium on Consumer Electronics, ISCE 2014
CountryKorea, Republic of
CityJeju
Period14/6/2214/6/25

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Random access storage
Scheduling
Data storage equipment
Dynamic random access storage
Consumer electronics
Electric power utilization
Degradation
Experiments

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, J. Y., Park, S. H., Seo, H., You, T., & Chung, E. Y. (2014). A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices. In ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics [6884314] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCE.2014.6884314
Kim, Jin Young ; Park, Sang Hoon ; Seo, Hyeokjun ; You, Taehee ; Chung, Eui Young. / A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices. ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics. Institute of Electrical and Electronics Engineers Inc., 2014.
@inproceedings{fea9a46a87144207858d51e787fc7a2d,
title = "A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices",
abstract = "Recently, Phase-change RAMs (PRAMs) are considered to be as a good candidate that can substitute as DRAM cache buffers (CBs) in NAND flash-based storage devices (NFSDs). PRAM is an adequate device to mobile consumer electronics thanks to low static power consumption, high density and non-volatility. However, in spite of many advantages over DRAM, asymmetric write/read speed of PRAM causes performance degradation in NFSD. In this paper, hence, we first propose a novel scheduling method for an NFSD with PRAM CB utilizing read-while-write (RWW) of PRAM. The method schedules NFSD's requests to service read and write simultaneously using RWW. In the experiment result, the proposed method reduces read and write latency on average by 30{\%} and 19{\%}, respectively.",
author = "Kim, {Jin Young} and Park, {Sang Hoon} and Hyeokjun Seo and Taehee You and Chung, {Eui Young}",
year = "2014",
month = "1",
day = "1",
doi = "10.1109/ISCE.2014.6884314",
language = "English",
isbn = "9781479945924",
booktitle = "ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Kim, JY, Park, SH, Seo, H, You, T & Chung, EY 2014, A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices. in ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics., 6884314, Institute of Electrical and Electronics Engineers Inc., 18th IEEE International Symposium on Consumer Electronics, ISCE 2014, Jeju, Korea, Republic of, 14/6/22. https://doi.org/10.1109/ISCE.2014.6884314

A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices. / Kim, Jin Young; Park, Sang Hoon; Seo, Hyeokjun; You, Taehee; Chung, Eui Young.

ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics. Institute of Electrical and Electronics Engineers Inc., 2014. 6884314.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices

AU - Kim, Jin Young

AU - Park, Sang Hoon

AU - Seo, Hyeokjun

AU - You, Taehee

AU - Chung, Eui Young

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Recently, Phase-change RAMs (PRAMs) are considered to be as a good candidate that can substitute as DRAM cache buffers (CBs) in NAND flash-based storage devices (NFSDs). PRAM is an adequate device to mobile consumer electronics thanks to low static power consumption, high density and non-volatility. However, in spite of many advantages over DRAM, asymmetric write/read speed of PRAM causes performance degradation in NFSD. In this paper, hence, we first propose a novel scheduling method for an NFSD with PRAM CB utilizing read-while-write (RWW) of PRAM. The method schedules NFSD's requests to service read and write simultaneously using RWW. In the experiment result, the proposed method reduces read and write latency on average by 30% and 19%, respectively.

AB - Recently, Phase-change RAMs (PRAMs) are considered to be as a good candidate that can substitute as DRAM cache buffers (CBs) in NAND flash-based storage devices (NFSDs). PRAM is an adequate device to mobile consumer electronics thanks to low static power consumption, high density and non-volatility. However, in spite of many advantages over DRAM, asymmetric write/read speed of PRAM causes performance degradation in NFSD. In this paper, hence, we first propose a novel scheduling method for an NFSD with PRAM CB utilizing read-while-write (RWW) of PRAM. The method schedules NFSD's requests to service read and write simultaneously using RWW. In the experiment result, the proposed method reduces read and write latency on average by 30% and 19%, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84907302116&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907302116&partnerID=8YFLogxK

U2 - 10.1109/ISCE.2014.6884314

DO - 10.1109/ISCE.2014.6884314

M3 - Conference contribution

SN - 9781479945924

BT - ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Kim JY, Park SH, Seo H, You T, Chung EY. A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices. In ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics. Institute of Electrical and Electronics Engineers Inc. 2014. 6884314 https://doi.org/10.1109/ISCE.2014.6884314