A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices

Jin Young Kim; Sang Hoon Park; Hyeokjun Seo; Taehee You; Eui Young Chung

doi:10.1109/ISCE.2014.6884314

A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices

Jin Young Kim, Sang Hoon Park, Hyeokjun Seo, Taehee You, Eui Young Chung

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Recently, Phase-change RAMs (PRAMs) are considered to be as a good candidate that can substitute as DRAM cache buffers (CBs) in NAND flash-based storage devices (NFSDs). PRAM is an adequate device to mobile consumer electronics thanks to low static power consumption, high density and non-volatility. However, in spite of many advantages over DRAM, asymmetric write/read speed of PRAM causes performance degradation in NFSD. In this paper, hence, we first propose a novel scheduling method for an NFSD with PRAM CB utilizing read-while-write (RWW) of PRAM. The method schedules NFSD's requests to service read and write simultaneously using RWW. In the experiment result, the proposed method reduces read and write latency on average by 30% and 19%, respectively.

Original language	English
Title of host publication	ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479945924
DOIs	https://doi.org/10.1109/ISCE.2014.6884314
Publication status	Published - 2014
Event	18th IEEE International Symposium on Consumer Electronics, ISCE 2014 - Jeju, Korea, Republic of Duration: 2014 Jun 22 → 2014 Jun 25

Publication series

Name	Proceedings of the International Symposium on Consumer Electronics, ISCE

Other

Other	18th IEEE International Symposium on Consumer Electronics, ISCE 2014
Country/Territory	Korea, Republic of
City	Jeju
Period	14/6/22 → 14/6/25

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ISCE.2014.6884314

Cite this

Kim, J. Y., Park, S. H., Seo, H., You, T., & Chung, E. Y. (2014). A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices. In ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics [6884314] (Proceedings of the International Symposium on Consumer Electronics, ISCE). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCE.2014.6884314

Kim, Jin Young ; Park, Sang Hoon ; Seo, Hyeokjun et al. / A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices. ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings of the International Symposium on Consumer Electronics, ISCE).

@inproceedings{fea9a46a87144207858d51e787fc7a2d,

title = "A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices",

abstract = "Recently, Phase-change RAMs (PRAMs) are considered to be as a good candidate that can substitute as DRAM cache buffers (CBs) in NAND flash-based storage devices (NFSDs). PRAM is an adequate device to mobile consumer electronics thanks to low static power consumption, high density and non-volatility. However, in spite of many advantages over DRAM, asymmetric write/read speed of PRAM causes performance degradation in NFSD. In this paper, hence, we first propose a novel scheduling method for an NFSD with PRAM CB utilizing read-while-write (RWW) of PRAM. The method schedules NFSD's requests to service read and write simultaneously using RWW. In the experiment result, the proposed method reduces read and write latency on average by 30% and 19%, respectively.",

author = "Kim, {Jin Young} and Park, {Sang Hoon} and Hyeokjun Seo and Taehee You and Chung, {Eui Young}",

year = "2014",

doi = "10.1109/ISCE.2014.6884314",

language = "English",

isbn = "9781479945924",

series = "Proceedings of the International Symposium on Consumer Electronics, ISCE",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics",

address = "United States",

note = "18th IEEE International Symposium on Consumer Electronics, ISCE 2014 ; Conference date: 22-06-2014 Through 25-06-2014",

}

Kim, JY, Park, SH, Seo, H, You, T & Chung, EY 2014, A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices. in ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics., 6884314, Proceedings of the International Symposium on Consumer Electronics, ISCE, Institute of Electrical and Electronics Engineers Inc., 18th IEEE International Symposium on Consumer Electronics, ISCE 2014, Jeju, Korea, Republic of, 14/6/22. https://doi.org/10.1109/ISCE.2014.6884314

A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices. / Kim, Jin Young; Park, Sang Hoon; Seo, Hyeokjun et al.

ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics. Institute of Electrical and Electronics Engineers Inc., 2014. 6884314 (Proceedings of the International Symposium on Consumer Electronics, ISCE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices

AU - Kim, Jin Young

AU - Park, Sang Hoon

AU - Seo, Hyeokjun

AU - You, Taehee

AU - Chung, Eui Young

PY - 2014

Y1 - 2014

N2 - Recently, Phase-change RAMs (PRAMs) are considered to be as a good candidate that can substitute as DRAM cache buffers (CBs) in NAND flash-based storage devices (NFSDs). PRAM is an adequate device to mobile consumer electronics thanks to low static power consumption, high density and non-volatility. However, in spite of many advantages over DRAM, asymmetric write/read speed of PRAM causes performance degradation in NFSD. In this paper, hence, we first propose a novel scheduling method for an NFSD with PRAM CB utilizing read-while-write (RWW) of PRAM. The method schedules NFSD's requests to service read and write simultaneously using RWW. In the experiment result, the proposed method reduces read and write latency on average by 30% and 19%, respectively.

AB - Recently, Phase-change RAMs (PRAMs) are considered to be as a good candidate that can substitute as DRAM cache buffers (CBs) in NAND flash-based storage devices (NFSDs). PRAM is an adequate device to mobile consumer electronics thanks to low static power consumption, high density and non-volatility. However, in spite of many advantages over DRAM, asymmetric write/read speed of PRAM causes performance degradation in NFSD. In this paper, hence, we first propose a novel scheduling method for an NFSD with PRAM CB utilizing read-while-write (RWW) of PRAM. The method schedules NFSD's requests to service read and write simultaneously using RWW. In the experiment result, the proposed method reduces read and write latency on average by 30% and 19%, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84907302116&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907302116&partnerID=8YFLogxK

U2 - 10.1109/ISCE.2014.6884314

DO - 10.1109/ISCE.2014.6884314

M3 - Conference contribution

AN - SCOPUS:84907302116

SN - 9781479945924

T3 - Proceedings of the International Symposium on Consumer Electronics, ISCE

BT - ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th IEEE International Symposium on Consumer Electronics, ISCE 2014

Y2 - 22 June 2014 through 25 June 2014

ER -

Kim JY, Park SH, Seo H, You T, Chung EY. A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices. In ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics. Institute of Electrical and Electronics Engineers Inc. 2014. 6884314. (Proceedings of the International Symposium on Consumer Electronics, ISCE). doi: 10.1109/ISCE.2014.6884314

A read-while-write-based out-of-order scheduling for high performance NAND flash-based storage devices

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this