A reduction process of palladium oxide thin films and hydrogen gas sensing properties of reduced palladium thin films

Young Tack Lee, Yeon Ju Kim, Jun Min Lee, Jin Hyoun Joe, Wooyoung Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This study reports a novel method off abricating highly sensitive hydrogen gas sensors based on PdO thin films. The PdO thin films with a thickness of 40 nm were deposited on Si substrates under Ar and O2 ambient conditions using a reactive dc magnetron sputtering system. Considerable changes in the resistance of the palladium oxide thin films were observed when they were initially exposed to hydrogen gas, as a result of the reduction process. The sensitivity of the PdO thin films was found to be as high as 90%. After the thin films were exposed to hydrogen gas, the nano-sized cracks were discovered to have formed on the surface of the PdO thin films. These types of nano-cracks that formed onthe deoxidized PdO thin films are known toplay a key role incausing a four-fold reduction of the response time of the absorption process. The results of this study demonstrate that deoxidized PdO thin films can be applied for use in the creation of high-sensitivity hydrogen sensors.

Original languageEnglish
Pages (from-to)347-352
Number of pages6
JournalJournal of Korean Institute of Metals and Materials
Volume48
Issue number4
DOIs
Publication statusPublished - 2010 Apr 1

Fingerprint

Palladium
Hydrogen
Oxide films
Oxides
Thin Films
Sensing
Gases
Thin films
Crack
Cracks
Gas Sensor
Magnetron Sputtering
Gas
palladium oxide
Reactive sputtering
Chemical sensors
Magnetron sputtering
Response Time
Fold
Absorption

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Modelling and Simulation
  • Surfaces, Coatings and Films
  • Metals and Alloys

Cite this

@article{b358608677fc4503920fd51cb177b7de,
title = "A reduction process of palladium oxide thin films and hydrogen gas sensing properties of reduced palladium thin films",
abstract = "This study reports a novel method off abricating highly sensitive hydrogen gas sensors based on PdO thin films. The PdO thin films with a thickness of 40 nm were deposited on Si substrates under Ar and O2 ambient conditions using a reactive dc magnetron sputtering system. Considerable changes in the resistance of the palladium oxide thin films were observed when they were initially exposed to hydrogen gas, as a result of the reduction process. The sensitivity of the PdO thin films was found to be as high as 90{\%}. After the thin films were exposed to hydrogen gas, the nano-sized cracks were discovered to have formed on the surface of the PdO thin films. These types of nano-cracks that formed onthe deoxidized PdO thin films are known toplay a key role incausing a four-fold reduction of the response time of the absorption process. The results of this study demonstrate that deoxidized PdO thin films can be applied for use in the creation of high-sensitivity hydrogen sensors.",
author = "Lee, {Young Tack} and Kim, {Yeon Ju} and Lee, {Jun Min} and Joe, {Jin Hyoun} and Wooyoung Lee",
year = "2010",
month = "4",
day = "1",
doi = "10.3365/KJMM.2010.48.04.347",
language = "English",
volume = "48",
pages = "347--352",
journal = "Journal of Korean Institute of Metals and Materials",
issn = "1738-8228",
publisher = "Korean Institute of Metals and Materials",
number = "4",

}

A reduction process of palladium oxide thin films and hydrogen gas sensing properties of reduced palladium thin films. / Lee, Young Tack; Kim, Yeon Ju; Lee, Jun Min; Joe, Jin Hyoun; Lee, Wooyoung.

In: Journal of Korean Institute of Metals and Materials, Vol. 48, No. 4, 01.04.2010, p. 347-352.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A reduction process of palladium oxide thin films and hydrogen gas sensing properties of reduced palladium thin films

AU - Lee, Young Tack

AU - Kim, Yeon Ju

AU - Lee, Jun Min

AU - Joe, Jin Hyoun

AU - Lee, Wooyoung

PY - 2010/4/1

Y1 - 2010/4/1

N2 - This study reports a novel method off abricating highly sensitive hydrogen gas sensors based on PdO thin films. The PdO thin films with a thickness of 40 nm were deposited on Si substrates under Ar and O2 ambient conditions using a reactive dc magnetron sputtering system. Considerable changes in the resistance of the palladium oxide thin films were observed when they were initially exposed to hydrogen gas, as a result of the reduction process. The sensitivity of the PdO thin films was found to be as high as 90%. After the thin films were exposed to hydrogen gas, the nano-sized cracks were discovered to have formed on the surface of the PdO thin films. These types of nano-cracks that formed onthe deoxidized PdO thin films are known toplay a key role incausing a four-fold reduction of the response time of the absorption process. The results of this study demonstrate that deoxidized PdO thin films can be applied for use in the creation of high-sensitivity hydrogen sensors.

AB - This study reports a novel method off abricating highly sensitive hydrogen gas sensors based on PdO thin films. The PdO thin films with a thickness of 40 nm were deposited on Si substrates under Ar and O2 ambient conditions using a reactive dc magnetron sputtering system. Considerable changes in the resistance of the palladium oxide thin films were observed when they were initially exposed to hydrogen gas, as a result of the reduction process. The sensitivity of the PdO thin films was found to be as high as 90%. After the thin films were exposed to hydrogen gas, the nano-sized cracks were discovered to have formed on the surface of the PdO thin films. These types of nano-cracks that formed onthe deoxidized PdO thin films are known toplay a key role incausing a four-fold reduction of the response time of the absorption process. The results of this study demonstrate that deoxidized PdO thin films can be applied for use in the creation of high-sensitivity hydrogen sensors.

UR - http://www.scopus.com/inward/record.url?scp=77951588075&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951588075&partnerID=8YFLogxK

U2 - 10.3365/KJMM.2010.48.04.347

DO - 10.3365/KJMM.2010.48.04.347

M3 - Article

AN - SCOPUS:77951588075

VL - 48

SP - 347

EP - 352

JO - Journal of Korean Institute of Metals and Materials

JF - Journal of Korean Institute of Metals and Materials

SN - 1738-8228

IS - 4

ER -