A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions

Hyukjoon Yoo, I. Sak Lee, Sujin Jung, Sung Min Rho, Byung Ha Kang, Hyun Jae Kim

Research output: Contribution to journalReview articlepeer-review

38 Citations (Scopus)


Metal oxide thin-film transistors have been continuously researched and mass-produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non-oxide hybrid structure. The materials of the absorption layer applied to absorb long-wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next-generation convergence studies combined with other research fields are introduced and future research directions are detailed.

Original languageEnglish
Article number2006091
JournalAdvanced Materials
Issue number47
Publication statusPublished - 2021 Nov 25

Bibliographical note

Funding Information:
H.Y. and I.S.L. contributed equally to this work. This research was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MSIT) (no. 2020M3H4A1A02084895).

Publisher Copyright:
© 2021 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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