Asymmetric source and drain (S/D) series resistances ( RS and RD ) are unavoidable in exfoliated MoS2 field-effect transistors (EM-FETs). Through combining the capacitance-voltage (C-V) and current-voltage characteristics, the asymmetric RS and RD values are extracted separately. First, the frequency-dispersive C-V characteristics are analyzed in a frequency range of 0.3-10 kHz. Second, the intrinsic RS and RD values ( RS,int and RD,int) are characterized through deembedding the parasitic pad capacitances (CPad = CS,Pad+CD,Pad) between the S/D metal and the bottom gate (G) in an overlapped region with the consideration of the structure-dependent parameters in the EM-FET. The proposed methodology is verified through comparison with the well-known channel resistance method, which is based on only the ID- VD characteristics in the linear region. Finally, RS,int and RD,int at various parasitic overlap areas are extracted separately with improved accuracy.
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© 1980-2012 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering