A separate extraction method for asymmetric source and drain resistances using frequency-dispersive C-V characteristics in exfoliated MoS2 FET

Hagyoul Bae, Choong Ki Kim, Seung Bae Jeon, Gwang Hyuk Shin, Eung Taek Kim, Jeong Gyu Song, Youngjun Kim, Dong Il Lee, Hyungjun Kim, Sung Yool Choi, Kyung Cheol Choi, Yang Kyu Choi

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Abstract

Asymmetric source and drain (S/D) series resistances ( RS and RD ) are unavoidable in exfoliated MoS2 field-effect transistors (EM-FETs). Through combining the capacitance-voltage (C-V) and current-voltage characteristics, the asymmetric RS and RD values are extracted separately. First, the frequency-dispersive C-V characteristics are analyzed in a frequency range of 0.3-10 kHz. Second, the intrinsic RS and RD values ( RS,int and RD,int) are characterized through deembedding the parasitic pad capacitances (CPad = CS,Pad+CD,Pad) between the S/D metal and the bottom gate (G) in an overlapped region with the consideration of the structure-dependent parameters in the EM-FET. The proposed methodology is verified through comparison with the well-known channel resistance method, which is based on only the ID- VD characteristics in the linear region. Finally, RS,int and RD,int at various parasitic overlap areas are extracted separately with improved accuracy.

Original languageEnglish
Article number7377027
Pages (from-to)231-233
Number of pages3
JournalIEEE Electron Device Letters
Volume37
Issue number2
DOIs
Publication statusPublished - 2016 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Bae, H., Kim, C. K., Jeon, S. B., Shin, G. H., Kim, E. T., Song, J. G., Kim, Y., Lee, D. I., Kim, H., Choi, S. Y., Choi, K. C., & Choi, Y. K. (2016). A separate extraction method for asymmetric source and drain resistances using frequency-dispersive C-V characteristics in exfoliated MoS2 FET. IEEE Electron Device Letters, 37(2), 231-233. [7377027]. https://doi.org/10.1109/LED.2015.2509473