Abstract
We present a silicon avalanche photodetector (APD) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology without any process modification or special substrates. The CMOS-APD is based on N +/P-well junction, and its current-voltage characteristics, responsivity, avalanche gain, and photodetection frequency response are measured. Gain-bandwidth product over 1 THz is achieved with the CMOS-APD having avalanche gain of 569 and 3-dB photodetection bandwidth of 3.2 GHz.
Original language | English |
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Pages (from-to) | 24189-24194 |
Number of pages | 6 |
Journal | Optics Express |
Volume | 18 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2010 Nov 8 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics