A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product

Myung Jae Lee, Woo Young Choi

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

We present a silicon avalanche photodetector (APD) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology without any process modification or special substrates. The CMOS-APD is based on N +/P-well junction, and its current-voltage characteristics, responsivity, avalanche gain, and photodetection frequency response are measured. Gain-bandwidth product over 1 THz is achieved with the CMOS-APD having avalanche gain of 569 and 3-dB photodetection bandwidth of 3.2 GHz.

Original languageEnglish
Pages (from-to)24189-24194
Number of pages6
JournalOptics Express
Volume18
Issue number23
DOIs
Publication statusPublished - 2010 Nov 8

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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