We have fabricated MOS memory devices based on coil-rod-coil triblock molecules acting as quantum dots. Uniform molecular dots result in a discrete shift in the threshold voltage at room temperature, which is indicative of single-electron effects. Molecular scalability and low-power operation make the silicon-molecular hybrid device an attractive candidate for next-generation electronic devices.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering