A silicon-molecular hybrid memory device

K. H. Yoo, K. S. Park, Jinhee Kim, Myungsoo Lee, Jung Woo Kim

Research output: Contribution to journalArticle

Abstract

We have fabricated MOS memory devices based on coil-rod-coil triblock molecules acting as quantum dots. Uniform molecular dots result in a discrete shift in the threshold voltage at room temperature, which is indicative of single-electron effects. Molecular scalability and low-power operation make the silicon-molecular hybrid device an attractive candidate for next-generation electronic devices.

Original languageEnglish
Pages (from-to)1472-1474
Number of pages3
JournalNanotechnology
Volume15
Issue number11
DOIs
Publication statusPublished - 2004 Nov 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Yoo, K. H., Park, K. S., Kim, J., Lee, M., & Kim, J. W. (2004). A silicon-molecular hybrid memory device. Nanotechnology, 15(11), 1472-1474. https://doi.org/10.1088/0957-4484/15/11/016