A silicon-molecular hybrid memory device

Kyung-hwa Yoo, K. S. Park, Jinhee Kim, Myungsoo Lee, Jung Woo Kim

Research output: Contribution to journalArticle

Abstract

We have fabricated MOS memory devices based on coil-rod-coil triblock molecules acting as quantum dots. Uniform molecular dots result in a discrete shift in the threshold voltage at room temperature, which is indicative of single-electron effects. Molecular scalability and low-power operation make the silicon-molecular hybrid device an attractive candidate for next-generation electronic devices.

Original languageEnglish
Pages (from-to)1472-1474
Number of pages3
JournalNanotechnology
Volume15
Issue number11
DOIs
Publication statusPublished - 2004 Nov 1

Fingerprint

Silicon
Threshold voltage
Semiconductor quantum dots
Scalability
Data storage equipment
Molecules
Electrons
Temperature

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Yoo, K., Park, K. S., Kim, J., Lee, M., & Kim, J. W. (2004). A silicon-molecular hybrid memory device. Nanotechnology, 15(11), 1472-1474. https://doi.org/10.1088/0957-4484/15/11/016
Yoo, Kyung-hwa ; Park, K. S. ; Kim, Jinhee ; Lee, Myungsoo ; Kim, Jung Woo. / A silicon-molecular hybrid memory device. In: Nanotechnology. 2004 ; Vol. 15, No. 11. pp. 1472-1474.
@article{526c71eb7d584813b43889102af1bc31,
title = "A silicon-molecular hybrid memory device",
abstract = "We have fabricated MOS memory devices based on coil-rod-coil triblock molecules acting as quantum dots. Uniform molecular dots result in a discrete shift in the threshold voltage at room temperature, which is indicative of single-electron effects. Molecular scalability and low-power operation make the silicon-molecular hybrid device an attractive candidate for next-generation electronic devices.",
author = "Kyung-hwa Yoo and Park, {K. S.} and Jinhee Kim and Myungsoo Lee and Kim, {Jung Woo}",
year = "2004",
month = "11",
day = "1",
doi = "10.1088/0957-4484/15/11/016",
language = "English",
volume = "15",
pages = "1472--1474",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "11",

}

Yoo, K, Park, KS, Kim, J, Lee, M & Kim, JW 2004, 'A silicon-molecular hybrid memory device', Nanotechnology, vol. 15, no. 11, pp. 1472-1474. https://doi.org/10.1088/0957-4484/15/11/016

A silicon-molecular hybrid memory device. / Yoo, Kyung-hwa; Park, K. S.; Kim, Jinhee; Lee, Myungsoo; Kim, Jung Woo.

In: Nanotechnology, Vol. 15, No. 11, 01.11.2004, p. 1472-1474.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A silicon-molecular hybrid memory device

AU - Yoo, Kyung-hwa

AU - Park, K. S.

AU - Kim, Jinhee

AU - Lee, Myungsoo

AU - Kim, Jung Woo

PY - 2004/11/1

Y1 - 2004/11/1

N2 - We have fabricated MOS memory devices based on coil-rod-coil triblock molecules acting as quantum dots. Uniform molecular dots result in a discrete shift in the threshold voltage at room temperature, which is indicative of single-electron effects. Molecular scalability and low-power operation make the silicon-molecular hybrid device an attractive candidate for next-generation electronic devices.

AB - We have fabricated MOS memory devices based on coil-rod-coil triblock molecules acting as quantum dots. Uniform molecular dots result in a discrete shift in the threshold voltage at room temperature, which is indicative of single-electron effects. Molecular scalability and low-power operation make the silicon-molecular hybrid device an attractive candidate for next-generation electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=9744235860&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9744235860&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/15/11/016

DO - 10.1088/0957-4484/15/11/016

M3 - Article

VL - 15

SP - 1472

EP - 1474

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 11

ER -