A simple dipping method to improve positive bias stress stability of In-Ga-Zn-O thin-film transistors using hydrogen peroxide

Sung Pyo Park, Hong Jae Kim, Young Jun Tak, Seonghwan Hong, Hee Jun Kim, Jong Sun Choi, Hyun Jae Kim

Research output: Contribution to journalConference article

Abstract

We proposed a simple dipping method for improving positive bias stability of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with homogeneous single layer using hydrogen peroxide solution which has strong oxidation potential The stability and field-effect mobility of IGZO TFTs were significantly improved by controlling dipping time.

Original languageEnglish
Pages (from-to)1136-1139
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume47
Issue number1
DOIs
Publication statusPublished - 2016 Jan 1
Event54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States
Duration: 2016 May 222016 May 27

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'A simple dipping method to improve positive bias stress stability of In-Ga-Zn-O thin-film transistors using hydrogen peroxide'. Together they form a unique fingerprint.

  • Cite this