We proposed a simple dipping method for improving positive bias stability of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with homogeneous single layer using hydrogen peroxide solution which has strong oxidation potential The stability and field-effect mobility of IGZO TFTs were significantly improved by controlling dipping time.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2016|
|Event||54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States|
Duration: 2016 May 22 → 2016 May 27
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0028819).
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