A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors

Keunkyu Song, Wooseok Yang, Yangho Jung, Sunho Jeong, Jooho Moon

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79 Citations (Scopus)


We studied high-k soluble yttrium oxide dielectrics for high performance oxide thin film transistors (TFTs). The electrical characteristics of yttrium oxide show leakage current density as less than 10-6 A cm -2 at 2 MV cm-1 regardless of annealing temperature and a high dielectric constant of nearly 16. For the first time, all solution-processed fully transparent ZnO-TFTs based on spin-coated YO x gate dielectric layers with a small interfacial trap density and high capacitance were demonstrated, exhibiting a field-effect mobility of 135 cm2 V-1 s-1, a threshold voltage of 1.73 V, and an on-off current ratio of 5.7 × 107 as well as low-voltage operation. In addition to microstructural and electrical analyses for solution-processed YOx dielectrics, we investigated the influences of dielectric-semiconductor interfacial quality on device parameters. Our results suggest that solution-processable fully transparent oxide TFTs have the potential for low-temperature and high-performance application in transparent, flexible devices.

Original languageEnglish
Pages (from-to)21265-21271
Number of pages7
JournalJournal of Materials Chemistry
Issue number39
Publication statusPublished - 2012 Oct 21


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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