A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors

Keunkyu Song, Wooseok Yang, Yangho Jung, Sunho Jeong, Joo Ho Moon

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

We studied high-k soluble yttrium oxide dielectrics for high performance oxide thin film transistors (TFTs). The electrical characteristics of yttrium oxide show leakage current density as less than 10-6 A cm -2 at 2 MV cm-1 regardless of annealing temperature and a high dielectric constant of nearly 16. For the first time, all solution-processed fully transparent ZnO-TFTs based on spin-coated YO x gate dielectric layers with a small interfacial trap density and high capacitance were demonstrated, exhibiting a field-effect mobility of 135 cm2 V-1 s-1, a threshold voltage of 1.73 V, and an on-off current ratio of 5.7 × 107 as well as low-voltage operation. In addition to microstructural and electrical analyses for solution-processed YOx dielectrics, we investigated the influences of dielectric-semiconductor interfacial quality on device parameters. Our results suggest that solution-processable fully transparent oxide TFTs have the potential for low-temperature and high-performance application in transparent, flexible devices.

Original languageEnglish
Pages (from-to)21265-21271
Number of pages7
JournalJournal of Materials Chemistry
Volume22
Issue number39
DOIs
Publication statusPublished - 2012 Oct 21

Fingerprint

Yttrium oxide
Thin film transistors
Oxide films
Gate dielectrics
Threshold voltage
Leakage currents
Permittivity
Capacitance
Current density
Annealing
Semiconductor materials
Temperature
Electric potential
yttria

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

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abstract = "We studied high-k soluble yttrium oxide dielectrics for high performance oxide thin film transistors (TFTs). The electrical characteristics of yttrium oxide show leakage current density as less than 10-6 A cm -2 at 2 MV cm-1 regardless of annealing temperature and a high dielectric constant of nearly 16. For the first time, all solution-processed fully transparent ZnO-TFTs based on spin-coated YO x gate dielectric layers with a small interfacial trap density and high capacitance were demonstrated, exhibiting a field-effect mobility of 135 cm2 V-1 s-1, a threshold voltage of 1.73 V, and an on-off current ratio of 5.7 × 107 as well as low-voltage operation. In addition to microstructural and electrical analyses for solution-processed YOx dielectrics, we investigated the influences of dielectric-semiconductor interfacial quality on device parameters. Our results suggest that solution-processable fully transparent oxide TFTs have the potential for low-temperature and high-performance application in transparent, flexible devices.",
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A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors. / Song, Keunkyu; Yang, Wooseok; Jung, Yangho; Jeong, Sunho; Moon, Joo Ho.

In: Journal of Materials Chemistry, Vol. 22, No. 39, 21.10.2012, p. 21265-21271.

Research output: Contribution to journalArticle

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