A split-path sensing circuit for spin torque transfer MRAM

Jisu Kim, Taehui Na, Jung Pill Kim, Seung H. Kang, Seong Ook Jung

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

As process technology scales down, sensing becomes difficult during read operations because the supply voltage, i.e., VDD, decreases and the process variation increases. Thus, a high enough sensing yield cannot be obtained with a conventional sensing circuit in deep submicron process technology. In this brief, a split-path sensing circuit is proposed to achieve a large enough sensing margin by using a variable reference voltage. The proposed sensing circuit is verified using Monte Carlo HSPICE simulation with industry-compatible low-leakage 45-nm model parameters. The proposed circuit has a sensing yield of 99% for 1-Mb memory with a sensing time of 1 ns and a sensing yield of 99% for 32-Mb memory with a sensing time of 3 ns.

Original languageEnglish
Article number6716031
Pages (from-to)193-197
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume61
Issue number3
DOIs
Publication statusPublished - 2014 Jan 1

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Torque
Networks (circuits)
Data storage equipment
Electric potential
Industry

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, Jisu ; Na, Taehui ; Kim, Jung Pill ; Kang, Seung H. ; Jung, Seong Ook. / A split-path sensing circuit for spin torque transfer MRAM. In: IEEE Transactions on Circuits and Systems II: Express Briefs. 2014 ; Vol. 61, No. 3. pp. 193-197.
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A split-path sensing circuit for spin torque transfer MRAM. / Kim, Jisu; Na, Taehui; Kim, Jung Pill; Kang, Seung H.; Jung, Seong Ook.

In: IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 61, No. 3, 6716031, 01.01.2014, p. 193-197.

Research output: Contribution to journalArticle

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