A split-path sensing circuit for spin torque transfer MRAM

Jisu Kim, Taehui Na, Jung Pill Kim, Seung H. Kang, Seong Ook Jung

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

As process technology scales down, sensing becomes difficult during read operations because the supply voltage, i.e., VDD, decreases and the process variation increases. Thus, a high enough sensing yield cannot be obtained with a conventional sensing circuit in deep submicron process technology. In this brief, a split-path sensing circuit is proposed to achieve a large enough sensing margin by using a variable reference voltage. The proposed sensing circuit is verified using Monte Carlo HSPICE simulation with industry-compatible low-leakage 45-nm model parameters. The proposed circuit has a sensing yield of 99% for 1-Mb memory with a sensing time of 1 ns and a sensing yield of 99% for 32-Mb memory with a sensing time of 3 ns.

Original languageEnglish
Article number6716031
Pages (from-to)193-197
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume61
Issue number3
DOIs
Publication statusPublished - 2014 Mar

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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