A structural investigation of CdTe(001) thin films on GaAs/Si(001) substrates by high-resolution electron microscopy

Kwang Chon Kim, Seung Hyub Baek, Hyun Jae Kim, Jin Dong Song, Jin Sang Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Epitaxial CdTe thin films were grown on GaAs/Si(001) substrates by metal-organic chemical vapor deposition using thin GaAs as a buffer layer. The interfaces were investigated using high-resolution transmission electron microscopy and geometric phase analysis strain mapping. It was observed that dislocation cores exist at the CdTe/GaAs interface with periodic distribution. The spacing of the misfit dislocation was measured to be about 2 nm, corresponding to the calculated spacing of a misfit dislocation (2.6 nm) in CdTe/Si with Burgers vector of a[110]/2. From these results, it is suggested that the GaAs buffer layer effectively absorbs the strain originating from the large lattice mismatch between the CdTe thin film and Si substrate with the formation of periodic structural defects.

Original languageEnglish
Pages (from-to)2795-2798
Number of pages4
JournalJournal of Electronic Materials
Volume41
Issue number10
DOIs
Publication statusPublished - 2012 Oct 1

Fingerprint

High resolution electron microscopy
Buffer layers
Dislocations (crystals)
electron microscopy
Thin films
Burgers vector
Lattice mismatch
high resolution
Epitaxial films
Organic chemicals
Substrates
thin films
High resolution transmission electron microscopy
buffers
spacing
Chemical vapor deposition
Organic Chemicals
Defects
metalorganic chemical vapor deposition
Metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, Kwang Chon ; Baek, Seung Hyub ; Kim, Hyun Jae ; Song, Jin Dong ; Kim, Jin Sang. / A structural investigation of CdTe(001) thin films on GaAs/Si(001) substrates by high-resolution electron microscopy. In: Journal of Electronic Materials. 2012 ; Vol. 41, No. 10. pp. 2795-2798.
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abstract = "Epitaxial CdTe thin films were grown on GaAs/Si(001) substrates by metal-organic chemical vapor deposition using thin GaAs as a buffer layer. The interfaces were investigated using high-resolution transmission electron microscopy and geometric phase analysis strain mapping. It was observed that dislocation cores exist at the CdTe/GaAs interface with periodic distribution. The spacing of the misfit dislocation was measured to be about 2 nm, corresponding to the calculated spacing of a misfit dislocation (2.6 nm) in CdTe/Si with Burgers vector of a[110]/2. From these results, it is suggested that the GaAs buffer layer effectively absorbs the strain originating from the large lattice mismatch between the CdTe thin film and Si substrate with the formation of periodic structural defects.",
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A structural investigation of CdTe(001) thin films on GaAs/Si(001) substrates by high-resolution electron microscopy. / Kim, Kwang Chon; Baek, Seung Hyub; Kim, Hyun Jae; Song, Jin Dong; Kim, Jin Sang.

In: Journal of Electronic Materials, Vol. 41, No. 10, 01.10.2012, p. 2795-2798.

Research output: Contribution to journalArticle

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T1 - A structural investigation of CdTe(001) thin films on GaAs/Si(001) substrates by high-resolution electron microscopy

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AU - Baek, Seung Hyub

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AU - Kim, Jin Sang

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AB - Epitaxial CdTe thin films were grown on GaAs/Si(001) substrates by metal-organic chemical vapor deposition using thin GaAs as a buffer layer. The interfaces were investigated using high-resolution transmission electron microscopy and geometric phase analysis strain mapping. It was observed that dislocation cores exist at the CdTe/GaAs interface with periodic distribution. The spacing of the misfit dislocation was measured to be about 2 nm, corresponding to the calculated spacing of a misfit dislocation (2.6 nm) in CdTe/Si with Burgers vector of a[110]/2. From these results, it is suggested that the GaAs buffer layer effectively absorbs the strain originating from the large lattice mismatch between the CdTe thin film and Si substrate with the formation of periodic structural defects.

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