Abstract
ITO films were deposited by rf cesium assisted rf plasma sputtering with substrate bias at room temperature. The optimum data of specific resistivity and XRD were obtained in the case of applying to -100 V of negative substrate bias at 0.02 A of target current. In this condition, 4.4X10-4 Ω cm of specific resistivity and 84.3% of transmittance of 550 nm were obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 1069-1072 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 21 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2003 Jul |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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Lee, D. Y., Lee, S. J., Song, K. M., & Baik, H. K. (2003). A study for the bias control of indium-tin-oxide films synthesized by cesium assisted radio frequency magnetron sputtering. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 21(4), 1069-1072. https://doi.org/10.1116/1.1584038