A study for the bias control of indium-tin-oxide films synthesized by cesium assisted radio frequency magnetron sputtering

Deuk Yeon Lee; Se Jong Lee; Kie Moon Song; Hong Koo Baik

doi:10.1116/1.1584038

A study for the bias control of indium-tin-oxide films synthesized by cesium assisted radio frequency magnetron sputtering

Deuk Yeon Lee, Se Jong Lee, Kie Moon Song, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

ITO films were deposited by rf cesium assisted rf plasma sputtering with substrate bias at room temperature. The optimum data of specific resistivity and XRD were obtained in the case of applying to -100 V of negative substrate bias at 0.02 A of target current. In this condition, 4.4X10^-4 Ω cm of specific resistivity and 84.3% of transmittance of 550 nm were obtained.

Original language	English
Pages (from-to)	1069-1072
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1584038
Publication status	Published - 2003 Jul

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "ITO films were deposited by rf cesium assisted rf plasma sputtering with substrate bias at room temperature. The optimum data of specific resistivity and XRD were obtained in the case of applying to -100 V of negative substrate bias at 0.02 A of target current. In this condition, 4.4X10-4 Ω cm of specific resistivity and 84.3% of transmittance of 550 nm were obtained.",

author = "Lee, {Deuk Yeon} and Lee, {Se Jong} and Song, {Kie Moon} and Baik, {Hong Koo}",

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AU - Song, Kie Moon

AU - Baik, Hong Koo

PY - 2003/7

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N2 - ITO films were deposited by rf cesium assisted rf plasma sputtering with substrate bias at room temperature. The optimum data of specific resistivity and XRD were obtained in the case of applying to -100 V of negative substrate bias at 0.02 A of target current. In this condition, 4.4X10-4 Ω cm of specific resistivity and 84.3% of transmittance of 550 nm were obtained.

AB - ITO films were deposited by rf cesium assisted rf plasma sputtering with substrate bias at room temperature. The optimum data of specific resistivity and XRD were obtained in the case of applying to -100 V of negative substrate bias at 0.02 A of target current. In this condition, 4.4X10-4 Ω cm of specific resistivity and 84.3% of transmittance of 550 nm were obtained.

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A study for the bias control of indium-tin-oxide films synthesized by cesium assisted radio frequency magnetron sputtering

Abstract

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