Abstract
ITO films were deposited by rf cesium assisted rf plasma sputtering with substrate bias at room temperature. The optimum data of specific resistivity and XRD were obtained in the case of applying to -100 V of negative substrate bias at 0.02 A of target current. In this condition, 4.4X10-4 Ω cm of specific resistivity and 84.3% of transmittance of 550 nm were obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 1069-1072 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 21 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2003 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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A study for the bias control of indium-tin-oxide films synthesized by cesium assisted radio frequency magnetron sputtering. / Lee, Deuk Yeon; Lee, Se Jong; Song, Kie Moon; Baik, Hong Koo.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 21, No. 4, 01.07.2003, p. 1069-1072.Research output: Contribution to journal › Article
TY - JOUR
T1 - A study for the bias control of indium-tin-oxide films synthesized by cesium assisted radio frequency magnetron sputtering
AU - Lee, Deuk Yeon
AU - Lee, Se Jong
AU - Song, Kie Moon
AU - Baik, Hong Koo
PY - 2003/7/1
Y1 - 2003/7/1
N2 - ITO films were deposited by rf cesium assisted rf plasma sputtering with substrate bias at room temperature. The optimum data of specific resistivity and XRD were obtained in the case of applying to -100 V of negative substrate bias at 0.02 A of target current. In this condition, 4.4X10-4 Ω cm of specific resistivity and 84.3% of transmittance of 550 nm were obtained.
AB - ITO films were deposited by rf cesium assisted rf plasma sputtering with substrate bias at room temperature. The optimum data of specific resistivity and XRD were obtained in the case of applying to -100 V of negative substrate bias at 0.02 A of target current. In this condition, 4.4X10-4 Ω cm of specific resistivity and 84.3% of transmittance of 550 nm were obtained.
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UR - http://www.scopus.com/inward/citedby.url?scp=0042030910&partnerID=8YFLogxK
U2 - 10.1116/1.1584038
DO - 10.1116/1.1584038
M3 - Article
VL - 21
SP - 1069
EP - 1072
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 4
ER -