A study for the bias control of indium-tin-oxide films synthesized by cesium assisted radio frequency magnetron sputtering

Deuk Yeon Lee, Se Jong Lee, Kie Moon Song, Hong Koo Baik

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

ITO films were deposited by rf cesium assisted rf plasma sputtering with substrate bias at room temperature. The optimum data of specific resistivity and XRD were obtained in the case of applying to -100 V of negative substrate bias at 0.02 A of target current. In this condition, 4.4X10-4 Ω cm of specific resistivity and 84.3% of transmittance of 550 nm were obtained.

Original languageEnglish
Pages (from-to)1069-1072
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number4
DOIs
Publication statusPublished - 2003 Jul 1

Fingerprint

Cesium
Tin oxides
cesium
indium oxides
Magnetron sputtering
Indium
tin oxides
Oxide films
oxide films
radio frequencies
magnetron sputtering
electrical resistivity
Substrates
ITO (semiconductors)
Sputtering
transmittance
sputtering
Plasmas
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "ITO films were deposited by rf cesium assisted rf plasma sputtering with substrate bias at room temperature. The optimum data of specific resistivity and XRD were obtained in the case of applying to -100 V of negative substrate bias at 0.02 A of target current. In this condition, 4.4X10-4 Ω cm of specific resistivity and 84.3{\%} of transmittance of 550 nm were obtained.",
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A study for the bias control of indium-tin-oxide films synthesized by cesium assisted radio frequency magnetron sputtering. / Lee, Deuk Yeon; Lee, Se Jong; Song, Kie Moon; Baik, Hong Koo.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 21, No. 4, 01.07.2003, p. 1069-1072.

Research output: Contribution to journalArticle

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