Abstract
Recently, high dosage doping on Si multi-gate field effect transistors and III-V planar structures using a self-limiting monolayer doping technique was reported to overcome challenges in scaling nano-sized transistors. The stoichiometry or composition of the capping layer was found to affect the diffusion efficiency of this process. In this work, we study the effect of a capping layer in sulfur monolayer doping on III-V junctions. Various capping temperatures and growth methods were compared. Based on the theoretical and experimental results, we suggest an optimized scheme consisting of a bi-layer capping structure. From Hall measurements and secondary ion mass spectrometry, a SiNx/BeO bi-layer capping, compared to single layer cap, exhibited the best results with a surface sheet resistance of 232 ω/sq, junction depth of 11 nm, dopant profile abruptness of 3.5 nm/dec, electrically active S concentration of 4.9 × 1019/cm3 (=1.34 × 1013/cm2), and 3 times higher activation efficiency without significant transient-enhanced dopant diffusion.
| Original language | English |
|---|---|
| Article number | 253514 |
| Journal | Applied Physics Letters |
| Volume | 101 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2012 Dec 17 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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A study of capping layers for sulfur monolayer doping on III-V junctions. / Yum, J. H.; Shin, H. S.; Hill, R.; Oh, Jungwoo; Lee, H. D.; Mushinski, Ryan M.; Hudnall, Todd W.; Bielawski, C. W.; Banerjee, S. K.; Loh, W. Y.; Wang, Wei E.; Kirsch, Paul.
In: Applied Physics Letters, Vol. 101, No. 25, 253514, 17.12.2012.Research output: Contribution to journal › Article
TY - JOUR
T1 - A study of capping layers for sulfur monolayer doping on III-V junctions
AU - Yum, J. H.
AU - Shin, H. S.
AU - Hill, R.
AU - Oh, Jungwoo
AU - Lee, H. D.
AU - Mushinski, Ryan M.
AU - Hudnall, Todd W.
AU - Bielawski, C. W.
AU - Banerjee, S. K.
AU - Loh, W. Y.
AU - Wang, Wei E.
AU - Kirsch, Paul
PY - 2012/12/17
Y1 - 2012/12/17
N2 - Recently, high dosage doping on Si multi-gate field effect transistors and III-V planar structures using a self-limiting monolayer doping technique was reported to overcome challenges in scaling nano-sized transistors. The stoichiometry or composition of the capping layer was found to affect the diffusion efficiency of this process. In this work, we study the effect of a capping layer in sulfur monolayer doping on III-V junctions. Various capping temperatures and growth methods were compared. Based on the theoretical and experimental results, we suggest an optimized scheme consisting of a bi-layer capping structure. From Hall measurements and secondary ion mass spectrometry, a SiNx/BeO bi-layer capping, compared to single layer cap, exhibited the best results with a surface sheet resistance of 232 ω/sq, junction depth of 11 nm, dopant profile abruptness of 3.5 nm/dec, electrically active S concentration of 4.9 × 1019/cm3 (=1.34 × 1013/cm2), and 3 times higher activation efficiency without significant transient-enhanced dopant diffusion.
AB - Recently, high dosage doping on Si multi-gate field effect transistors and III-V planar structures using a self-limiting monolayer doping technique was reported to overcome challenges in scaling nano-sized transistors. The stoichiometry or composition of the capping layer was found to affect the diffusion efficiency of this process. In this work, we study the effect of a capping layer in sulfur monolayer doping on III-V junctions. Various capping temperatures and growth methods were compared. Based on the theoretical and experimental results, we suggest an optimized scheme consisting of a bi-layer capping structure. From Hall measurements and secondary ion mass spectrometry, a SiNx/BeO bi-layer capping, compared to single layer cap, exhibited the best results with a surface sheet resistance of 232 ω/sq, junction depth of 11 nm, dopant profile abruptness of 3.5 nm/dec, electrically active S concentration of 4.9 × 1019/cm3 (=1.34 × 1013/cm2), and 3 times higher activation efficiency without significant transient-enhanced dopant diffusion.
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U2 - 10.1063/1.4772641
DO - 10.1063/1.4772641
M3 - Article
AN - SCOPUS:84871746928
VL - 101
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 253514
ER -