A study of dielectrophoretically aligned gallium nitride nanowires in metal electrodes and their electrical properties

S. Y. Lee, T. H. Kim, D. I. Suh, N. K. Cho, H. K. Seong, S. W. Jung, H. J. Choi, S. K. Lee

Research output: Contribution to journalArticle

21 Citations (Scopus)


We quantitatively characterized the ac dielectrophoresis force on semiconducting gallium nitride (GaN) nanowires in suspension with variations of the ac electric field and frequency. The yield of aligned GaN nanowires increased with increasing ac electric field (up to 20 Vp-p). The yield results indicate that the GaN nanowires were well aligned with a high yield of ∼80% over the entire array in a chip at the frequencies of 10 kHz and 20 MHz. In addition, the electrical properties of GaN nanowires prepared by dielectrophoresis were investigated using conventional three-probe schemes in field-effect transistor structures.

Original languageEnglish
Pages (from-to)107-112
Number of pages6
JournalChemical Physics Letters
Issue number1-3
Publication statusPublished - 2006 Aug 18


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this