A study of dielectrophoretically aligned gallium nitride nanowires in metal electrodes and their electrical properties

S. Y. Lee, T. H. Kim, D. I. Suh, N. K. Cho, H. K. Seong, S. W. Jung, H. J. Choi, S. K. Lee

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We quantitatively characterized the ac dielectrophoresis force on semiconducting gallium nitride (GaN) nanowires in suspension with variations of the ac electric field and frequency. The yield of aligned GaN nanowires increased with increasing ac electric field (up to 20 Vp-p). The yield results indicate that the GaN nanowires were well aligned with a high yield of ∼80% over the entire array in a chip at the frequencies of 10 kHz and 20 MHz. In addition, the electrical properties of GaN nanowires prepared by dielectrophoresis were investigated using conventional three-probe schemes in field-effect transistor structures.

Original languageEnglish
Pages (from-to)107-112
Number of pages6
JournalChemical Physics Letters
Volume427
Issue number1-3
DOIs
Publication statusPublished - 2006 Aug 18

Fingerprint

gallium nitrides
Nanowires
Electric properties
nanowires
Metals
electrical properties
Electrodes
electrodes
Semiconducting gallium
Electrophoresis
metals
Electric fields
electric fields
Field effect transistors
Suspensions
field effect transistors
chips
gallium nitride
probes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Lee, S. Y. ; Kim, T. H. ; Suh, D. I. ; Cho, N. K. ; Seong, H. K. ; Jung, S. W. ; Choi, H. J. ; Lee, S. K. / A study of dielectrophoretically aligned gallium nitride nanowires in metal electrodes and their electrical properties. In: Chemical Physics Letters. 2006 ; Vol. 427, No. 1-3. pp. 107-112.
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A study of dielectrophoretically aligned gallium nitride nanowires in metal electrodes and their electrical properties. / Lee, S. Y.; Kim, T. H.; Suh, D. I.; Cho, N. K.; Seong, H. K.; Jung, S. W.; Choi, H. J.; Lee, S. K.

In: Chemical Physics Letters, Vol. 427, No. 1-3, 18.08.2006, p. 107-112.

Research output: Contribution to journalArticle

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AU - Kim, T. H.

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