A study of piezoelectric field related strain difference in GaN-based blue light-emitting diodes grown on silicon(111) and sapphire substrates

K. S. Jeon, J. H. Sung, M. W. Lee, H. Y. Song, H. Y. Shin, W. H. Park, Y. I. Jang, M. G. Kang, Y. H. Choi, J. S. Lee, D. H. Ko, H. Y. Ryu

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1 Citation (Scopus)

Abstract

We investigate the strain difference in InGaN/GaN multiple quantum wells of blue light-emitting diode (LED) structures grown on silicon(111) and c-plane sapphire substrates by comparing the strength of piezo-electric fields in MQWs. The piezo-electric fields for two LED samples grown on silicon and sapphire substrates are measured by using the reverse-bias electro-reflectance (ER) spectroscopy. The flat-band voltage is obtained by measuring the applied reverse bias voltage that induces a phase inversion in the ER spectra, which is used to calculate the strength of piezo-electric fields. The piezo-electric field is determined to be 1.36 MV/cm for the LED on silicon substrate and 1.83 MV/cm for the LED on sapphire substrate. The ER measurement results indicate that the strain-induced piezo-electric field is greatly reduced in the LED grown on silicon substrates consistent with previous strain measurement results by micro-Raman spectroscopy and high-resolution transmission electron microscopy.

Original languageEnglish
Pages (from-to)1798-1801
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number2
DOIs
Publication statusPublished - 2016 Feb 1

Bibliographical note

Funding Information:
This work was supported in part by National Research Foundation of Korea Grant funded by the Korean Government (2012R1A1A2039630).

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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