A study of resistive switching property in Pr 0.7 Ca 0.3 MnO 3 , CaMnO 3 , and their bi-layer films

Hong Sub Lee, Sun Gyu Choi, Hye Jung Choi, Sung Woong Chung, Hyung-Ho Park

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Among the next generation nonvolatile memories, a resistive random access memory is promising due to its simple structure and ultra-fast speed. Pr 1 - x Ca x MnO 3 is an attractive resistive random access memory material because it offers resistive switching without a 'forming process'. However, the resistive switching mechanism has not been fully understood yet. For the application to industry, several barriers of resistive switching materials such as forming process of binary compound, current level, control of resistive switching property, and switching direction have to be overcome. Therefore, this study is progressed for control of resistive switching property using Ti top electrode with Pr 0.7 Ca 0.3 MnO 3 among the candidate resistive switching materials, CaMnO 3 and bi-layer film of these materials. Clockwise switching was observed in all the films, but Pr 0.7 Ca 0.3 MnO 3 , CaMnO 3 , and the bi-layer films showed definitely different resistive switching property in high resistance state switching of positive voltage and low resistance state switching of negative voltage. From an analysis of the current voltage characteristics, this study demonstrated a difference of a generation mechanism of oxygen vacancy which depends on the resistance of a film and interface and it shows the one method of the switching property control.

Original languageEnglish
Pages (from-to)347-351
Number of pages5
JournalThin Solid Films
Volume529
DOIs
Publication statusPublished - 2013 Feb 1

Fingerprint

random access memory
Data storage equipment
electric potential
Level control
low resistance
high resistance
Electric potential
Oxygen vacancies
Current voltage characteristics
industries
Electrodes
electrodes
oxygen
Industry
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Lee, Hong Sub ; Choi, Sun Gyu ; Choi, Hye Jung ; Chung, Sung Woong ; Park, Hyung-Ho. / A study of resistive switching property in Pr 0.7 Ca 0.3 MnO 3 , CaMnO 3 , and their bi-layer films In: Thin Solid Films. 2013 ; Vol. 529. pp. 347-351.
@article{2111f8915535466ea41a6575f4abbf4f,
title = "A study of resistive switching property in Pr 0.7 Ca 0.3 MnO 3 , CaMnO 3 , and their bi-layer films",
abstract = "Among the next generation nonvolatile memories, a resistive random access memory is promising due to its simple structure and ultra-fast speed. Pr 1 - x Ca x MnO 3 is an attractive resistive random access memory material because it offers resistive switching without a 'forming process'. However, the resistive switching mechanism has not been fully understood yet. For the application to industry, several barriers of resistive switching materials such as forming process of binary compound, current level, control of resistive switching property, and switching direction have to be overcome. Therefore, this study is progressed for control of resistive switching property using Ti top electrode with Pr 0.7 Ca 0.3 MnO 3 among the candidate resistive switching materials, CaMnO 3 and bi-layer film of these materials. Clockwise switching was observed in all the films, but Pr 0.7 Ca 0.3 MnO 3 , CaMnO 3 , and the bi-layer films showed definitely different resistive switching property in high resistance state switching of positive voltage and low resistance state switching of negative voltage. From an analysis of the current voltage characteristics, this study demonstrated a difference of a generation mechanism of oxygen vacancy which depends on the resistance of a film and interface and it shows the one method of the switching property control.",
author = "Lee, {Hong Sub} and Choi, {Sun Gyu} and Choi, {Hye Jung} and Chung, {Sung Woong} and Hyung-Ho Park",
year = "2013",
month = "2",
day = "1",
doi = "10.1016/j.tsf.2012.07.075",
language = "English",
volume = "529",
pages = "347--351",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

A study of resistive switching property in Pr 0.7 Ca 0.3 MnO 3 , CaMnO 3 , and their bi-layer films . / Lee, Hong Sub; Choi, Sun Gyu; Choi, Hye Jung; Chung, Sung Woong; Park, Hyung-Ho.

In: Thin Solid Films, Vol. 529, 01.02.2013, p. 347-351.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A study of resistive switching property in Pr 0.7 Ca 0.3 MnO 3 , CaMnO 3 , and their bi-layer films

AU - Lee, Hong Sub

AU - Choi, Sun Gyu

AU - Choi, Hye Jung

AU - Chung, Sung Woong

AU - Park, Hyung-Ho

PY - 2013/2/1

Y1 - 2013/2/1

N2 - Among the next generation nonvolatile memories, a resistive random access memory is promising due to its simple structure and ultra-fast speed. Pr 1 - x Ca x MnO 3 is an attractive resistive random access memory material because it offers resistive switching without a 'forming process'. However, the resistive switching mechanism has not been fully understood yet. For the application to industry, several barriers of resistive switching materials such as forming process of binary compound, current level, control of resistive switching property, and switching direction have to be overcome. Therefore, this study is progressed for control of resistive switching property using Ti top electrode with Pr 0.7 Ca 0.3 MnO 3 among the candidate resistive switching materials, CaMnO 3 and bi-layer film of these materials. Clockwise switching was observed in all the films, but Pr 0.7 Ca 0.3 MnO 3 , CaMnO 3 , and the bi-layer films showed definitely different resistive switching property in high resistance state switching of positive voltage and low resistance state switching of negative voltage. From an analysis of the current voltage characteristics, this study demonstrated a difference of a generation mechanism of oxygen vacancy which depends on the resistance of a film and interface and it shows the one method of the switching property control.

AB - Among the next generation nonvolatile memories, a resistive random access memory is promising due to its simple structure and ultra-fast speed. Pr 1 - x Ca x MnO 3 is an attractive resistive random access memory material because it offers resistive switching without a 'forming process'. However, the resistive switching mechanism has not been fully understood yet. For the application to industry, several barriers of resistive switching materials such as forming process of binary compound, current level, control of resistive switching property, and switching direction have to be overcome. Therefore, this study is progressed for control of resistive switching property using Ti top electrode with Pr 0.7 Ca 0.3 MnO 3 among the candidate resistive switching materials, CaMnO 3 and bi-layer film of these materials. Clockwise switching was observed in all the films, but Pr 0.7 Ca 0.3 MnO 3 , CaMnO 3 , and the bi-layer films showed definitely different resistive switching property in high resistance state switching of positive voltage and low resistance state switching of negative voltage. From an analysis of the current voltage characteristics, this study demonstrated a difference of a generation mechanism of oxygen vacancy which depends on the resistance of a film and interface and it shows the one method of the switching property control.

UR - http://www.scopus.com/inward/record.url?scp=84873705931&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873705931&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.07.075

DO - 10.1016/j.tsf.2012.07.075

M3 - Article

AN - SCOPUS:84873705931

VL - 529

SP - 347

EP - 351

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -