A study of the effect of excessive free carbon on mean whisker diameters grown by chemical vapor deposition

D. C. Lim, Y. J. Lee, Doo Jin Choi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Silicon carbide whiskers were grown by chemical vapor deposition without a metallic catalyst at a temperature ranging between 1000 and 1100 °C, and at a constant pressure of 5 Torr with input gas ratios, α [H2/MTS (methyltrichlorosilane)], of 30 to 50. The mean diameter of the whiskers changed as temperature and input gas ratios were varied. To determine why the diameter of the whiskers changed, we investigated the effect of these two parameters, temperature and gas ratio, on the stoichiometry of the deposit, both from thermodynamical calculations and from XPS measurements on the as grown whiskers. We demonstrated that the amount of free carbon increases as the temperature increases and the input gas ratio decreases. We showed the correction between the amount of free carbon and the mean whisker diameter.

Original languageEnglish
Pages (from-to)247-251
Number of pages5
JournalSurface and Coatings Technology
Volume192
Issue number2-3
DOIs
Publication statusPublished - 2005 Mar 21

Fingerprint

Chemical vapor deposition
Carbon
Gases
vapor deposition
carbon
gases
Temperature
temperature ratio
Silicon carbide
Stoichiometry
silicon carbides
temperature
stoichiometry
Deposits
X ray photoelectron spectroscopy
deposits
catalysts
Catalysts

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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abstract = "Silicon carbide whiskers were grown by chemical vapor deposition without a metallic catalyst at a temperature ranging between 1000 and 1100 °C, and at a constant pressure of 5 Torr with input gas ratios, α [H2/MTS (methyltrichlorosilane)], of 30 to 50. The mean diameter of the whiskers changed as temperature and input gas ratios were varied. To determine why the diameter of the whiskers changed, we investigated the effect of these two parameters, temperature and gas ratio, on the stoichiometry of the deposit, both from thermodynamical calculations and from XPS measurements on the as grown whiskers. We demonstrated that the amount of free carbon increases as the temperature increases and the input gas ratio decreases. We showed the correction between the amount of free carbon and the mean whisker diameter.",
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A study of the effect of excessive free carbon on mean whisker diameters grown by chemical vapor deposition. / Lim, D. C.; Lee, Y. J.; Choi, Doo Jin.

In: Surface and Coatings Technology, Vol. 192, No. 2-3, 21.03.2005, p. 247-251.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Lim, D. C.

AU - Lee, Y. J.

AU - Choi, Doo Jin

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AB - Silicon carbide whiskers were grown by chemical vapor deposition without a metallic catalyst at a temperature ranging between 1000 and 1100 °C, and at a constant pressure of 5 Torr with input gas ratios, α [H2/MTS (methyltrichlorosilane)], of 30 to 50. The mean diameter of the whiskers changed as temperature and input gas ratios were varied. To determine why the diameter of the whiskers changed, we investigated the effect of these two parameters, temperature and gas ratio, on the stoichiometry of the deposit, both from thermodynamical calculations and from XPS measurements on the as grown whiskers. We demonstrated that the amount of free carbon increases as the temperature increases and the input gas ratio decreases. We showed the correction between the amount of free carbon and the mean whisker diameter.

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