A study of the effect of excessive free carbon on mean whisker diameters grown by chemical vapor deposition

D. C. Lim, Y. J. Lee, D. J. Choi

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10 Citations (Scopus)

Abstract

Silicon carbide whiskers were grown by chemical vapor deposition without a metallic catalyst at a temperature ranging between 1000 and 1100 °C, and at a constant pressure of 5 Torr with input gas ratios, α [H2/MTS (methyltrichlorosilane)], of 30 to 50. The mean diameter of the whiskers changed as temperature and input gas ratios were varied. To determine why the diameter of the whiskers changed, we investigated the effect of these two parameters, temperature and gas ratio, on the stoichiometry of the deposit, both from thermodynamical calculations and from XPS measurements on the as grown whiskers. We demonstrated that the amount of free carbon increases as the temperature increases and the input gas ratio decreases. We showed the correction between the amount of free carbon and the mean whisker diameter.

Original languageEnglish
Pages (from-to)247-251
Number of pages5
JournalSurface and Coatings Technology
Volume192
Issue number2-3
DOIs
Publication statusPublished - 2005 Mar 21

Bibliographical note

Funding Information:
This research, under the contract project code MS-03-211-01, has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr ), which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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