A Study of the LaAlO 3 Gate Dielectric Deposited by Using the MOCVD Process

Jin Hyung Jun, Doo Jin Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Lanthanum aluminate (LaAlO 3) thin films with two kinds of Al composition were directly deposited on Si substrates by using metalorganic chemical-vapor deposition (MOCVD) with La(tmhd) 3 tetraglyme adduct and Al-acetylacetonate as source precursors. The structural and the electrical properties of the as-deposited and the annealed films were investigated as functions of the annealing temperature, and the properties of films with different Al compositions were compared with each other. Films with more incorporated-Al showed less thickness change when they were annealed at 900°C for 1 hour and lower leakage current densities for the as-deposited and the annealed films than films with lower Al composition. In the point of equivalent oxide thickness (EOT), although the as-deposited lanthanum aluminate films with a higher Al composition had a larger EOT than the as-deposited films with a lower Al composition, the EOT of annealed films with a higher Al composition was smaller than that of annealed films with a lower Al composition.

Original languageEnglish
Pages (from-to)22-24
Number of pages3
JournalJournal of the Korean Physical Society
Volume44
Issue number1
Publication statusPublished - 2004 Jan 1

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metalorganic chemical vapor deposition
lanthanum
oxides
adducts
leakage
electrical properties
current density
annealing
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{96a2e5ac657344d6b1ab11be100dd975,
title = "A Study of the LaAlO 3 Gate Dielectric Deposited by Using the MOCVD Process",
abstract = "Lanthanum aluminate (LaAlO 3) thin films with two kinds of Al composition were directly deposited on Si substrates by using metalorganic chemical-vapor deposition (MOCVD) with La(tmhd) 3 tetraglyme adduct and Al-acetylacetonate as source precursors. The structural and the electrical properties of the as-deposited and the annealed films were investigated as functions of the annealing temperature, and the properties of films with different Al compositions were compared with each other. Films with more incorporated-Al showed less thickness change when they were annealed at 900°C for 1 hour and lower leakage current densities for the as-deposited and the annealed films than films with lower Al composition. In the point of equivalent oxide thickness (EOT), although the as-deposited lanthanum aluminate films with a higher Al composition had a larger EOT than the as-deposited films with a lower Al composition, the EOT of annealed films with a higher Al composition was smaller than that of annealed films with a lower Al composition.",
author = "Jun, {Jin Hyung} and Choi, {Doo Jin}",
year = "2004",
month = "1",
day = "1",
language = "English",
volume = "44",
pages = "22--24",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "1",

}

A Study of the LaAlO 3 Gate Dielectric Deposited by Using the MOCVD Process. / Jun, Jin Hyung; Choi, Doo Jin.

In: Journal of the Korean Physical Society, Vol. 44, No. 1, 01.01.2004, p. 22-24.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A Study of the LaAlO 3 Gate Dielectric Deposited by Using the MOCVD Process

AU - Jun, Jin Hyung

AU - Choi, Doo Jin

PY - 2004/1/1

Y1 - 2004/1/1

N2 - Lanthanum aluminate (LaAlO 3) thin films with two kinds of Al composition were directly deposited on Si substrates by using metalorganic chemical-vapor deposition (MOCVD) with La(tmhd) 3 tetraglyme adduct and Al-acetylacetonate as source precursors. The structural and the electrical properties of the as-deposited and the annealed films were investigated as functions of the annealing temperature, and the properties of films with different Al compositions were compared with each other. Films with more incorporated-Al showed less thickness change when they were annealed at 900°C for 1 hour and lower leakage current densities for the as-deposited and the annealed films than films with lower Al composition. In the point of equivalent oxide thickness (EOT), although the as-deposited lanthanum aluminate films with a higher Al composition had a larger EOT than the as-deposited films with a lower Al composition, the EOT of annealed films with a higher Al composition was smaller than that of annealed films with a lower Al composition.

AB - Lanthanum aluminate (LaAlO 3) thin films with two kinds of Al composition were directly deposited on Si substrates by using metalorganic chemical-vapor deposition (MOCVD) with La(tmhd) 3 tetraglyme adduct and Al-acetylacetonate as source precursors. The structural and the electrical properties of the as-deposited and the annealed films were investigated as functions of the annealing temperature, and the properties of films with different Al compositions were compared with each other. Films with more incorporated-Al showed less thickness change when they were annealed at 900°C for 1 hour and lower leakage current densities for the as-deposited and the annealed films than films with lower Al composition. In the point of equivalent oxide thickness (EOT), although the as-deposited lanthanum aluminate films with a higher Al composition had a larger EOT than the as-deposited films with a lower Al composition, the EOT of annealed films with a higher Al composition was smaller than that of annealed films with a lower Al composition.

UR - http://www.scopus.com/inward/record.url?scp=0842285845&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0842285845&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0842285845

VL - 44

SP - 22

EP - 24

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 1

ER -