A study of the memory characteristics of Al2O3/Y 2O3/SiO2 multi-stacked films with different tunnel oxide thicknesses

Hye Young Jung, Yoo Youl Choi, Hyung Keun Kim, Doo Jin Choi

Research output: Contribution to journalArticle

Abstract

Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, Al2O3/Y 2O3/SiO2 (AYO) multilayer structures using a high-k Y2O3 film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a Y2O3 layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the Y2O 3 with 4 nm SiO2 tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to 104) due to the superior charge-trapping characteristics of Y2O3. We expect that these high-k Y2O3 films can be candidates to replace Si3N4 films as the charge-trapping layer in SONOS-type flash memory devices.

Original languageEnglish
Pages (from-to)631-636
Number of pages6
JournalJournal of the Korean Ceramic Society
Volume49
Issue number6
DOIs
Publication statusPublished - 2012 Nov 1

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Silicon oxides
Charge trapping
Oxides
Tunnels
Data storage equipment
Nitrides
Organic Chemicals
Flash memory
Organic chemicals
Chemical vapor deposition
Multilayers
Electric properties
Durability
Metals

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

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title = "A study of the memory characteristics of Al2O3/Y 2O3/SiO2 multi-stacked films with different tunnel oxide thicknesses",
abstract = "Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, Al2O3/Y 2O3/SiO2 (AYO) multilayer structures using a high-k Y2O3 film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a Y2O3 layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the Y2O 3 with 4 nm SiO2 tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to 104) due to the superior charge-trapping characteristics of Y2O3. We expect that these high-k Y2O3 films can be candidates to replace Si3N4 films as the charge-trapping layer in SONOS-type flash memory devices.",
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A study of the memory characteristics of Al2O3/Y 2O3/SiO2 multi-stacked films with different tunnel oxide thicknesses. / Jung, Hye Young; Choi, Yoo Youl; Kim, Hyung Keun; Choi, Doo Jin.

In: Journal of the Korean Ceramic Society, Vol. 49, No. 6, 01.11.2012, p. 631-636.

Research output: Contribution to journalArticle

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