Abstract
Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, Al2O3/Y 2O3/SiO2 (AYO) multilayer structures using a high-k Y2O3 film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a Y2O3 layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the Y2O 3 with 4 nm SiO2 tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to 104) due to the superior charge-trapping characteristics of Y2O3. We expect that these high-k Y2O3 films can be candidates to replace Si3N4 films as the charge-trapping layer in SONOS-type flash memory devices.
| Original language | English |
|---|---|
| Pages (from-to) | 631-636 |
| Number of pages | 6 |
| Journal | Journal of the Korean Ceramic Society |
| Volume | 49 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2012 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
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A study of the memory characteristics of Al2O3/Y 2O3/SiO2 multi-stacked films with different tunnel oxide thicknesses. / Jung, Hye Young; Choi, Yoo Youl; Kim, Hyung Keun; Choi, Doo Jin.
In: Journal of the Korean Ceramic Society, Vol. 49, No. 6, 01.11.2012, p. 631-636.Research output: Contribution to journal › Article
TY - JOUR
T1 - A study of the memory characteristics of Al2O3/Y 2O3/SiO2 multi-stacked films with different tunnel oxide thicknesses
AU - Jung, Hye Young
AU - Choi, Yoo Youl
AU - Kim, Hyung Keun
AU - Choi, Doo Jin
PY - 2012/11/1
Y1 - 2012/11/1
N2 - Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, Al2O3/Y 2O3/SiO2 (AYO) multilayer structures using a high-k Y2O3 film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a Y2O3 layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the Y2O 3 with 4 nm SiO2 tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to 104) due to the superior charge-trapping characteristics of Y2O3. We expect that these high-k Y2O3 films can be candidates to replace Si3N4 films as the charge-trapping layer in SONOS-type flash memory devices.
AB - Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, Al2O3/Y 2O3/SiO2 (AYO) multilayer structures using a high-k Y2O3 film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a Y2O3 layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the Y2O 3 with 4 nm SiO2 tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to 104) due to the superior charge-trapping characteristics of Y2O3. We expect that these high-k Y2O3 films can be candidates to replace Si3N4 films as the charge-trapping layer in SONOS-type flash memory devices.
UR - http://www.scopus.com/inward/record.url?scp=84872049774&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84872049774&partnerID=8YFLogxK
U2 - 10.4191/kcers.2012.49.6.631
DO - 10.4191/kcers.2012.49.6.631
M3 - Article
AN - SCOPUS:84872049774
VL - 49
SP - 631
EP - 636
JO - Journal of the Korean Ceramic Society
JF - Journal of the Korean Ceramic Society
SN - 1229-7801
IS - 6
ER -