A study of the memory characteristics of multilayer structures with varying compositions of the LAO charge trap

Yong Cha Seung, June Kim Hyo, Doo Jin Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Charge trap flash (CTF) memory devices are candidates to replace NAND flash devices. In this study, Si multilayer structures with lanthanum aluminum oxide charge traps were fabricated for nonvolatile memory device applications. An aluminum oxide film was used as a blocking oxide for low power consumption in the program/erase operations and to minimize charge transport through the blocking oxide layer. The thickness of SiO2 as a tunnel oxide layer was 40 Å. The thicknesses of the oxide layers were determined by high resolution transmission electron microscopy (HRTEM) and all samples showed amorphous structures. The composition of the charge trapping lanthanum aluminum oxide were analyzed using X-ray photoelectron spectroscopy (XPS). From C-V measurements, a maximum memory window of 3.48 V was observed when the flow rate ratio was La: Al = 3: 3. The memory properties were affected by the band structure, trap energy level/density, and dielectric constant of the charge trap layer. In the reliability cycling tests, all samples maintained their initial memory window over 104 cycles.

Original languageEnglish
Pages (from-to)57-61
Number of pages5
JournalJournal of Ceramic Processing Research
Volume12
Issue number1
Publication statusPublished - 2011 Aug 5

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Multilayers
Oxides
Aluminum Oxide
Data storage equipment
Lanthanum
Chemical analysis
Aluminum
Charge trapping
Flash memory
High resolution transmission electron microscopy
Band structure
Electron energy levels
Oxide films
Charge transfer
Tunnels
Electric power utilization
Permittivity
X ray photoelectron spectroscopy
Flow rate

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

@article{90e943033fca4c45b4a860e4fd4cefc5,
title = "A study of the memory characteristics of multilayer structures with varying compositions of the LAO charge trap",
abstract = "Charge trap flash (CTF) memory devices are candidates to replace NAND flash devices. In this study, Si multilayer structures with lanthanum aluminum oxide charge traps were fabricated for nonvolatile memory device applications. An aluminum oxide film was used as a blocking oxide for low power consumption in the program/erase operations and to minimize charge transport through the blocking oxide layer. The thickness of SiO2 as a tunnel oxide layer was 40 {\AA}. The thicknesses of the oxide layers were determined by high resolution transmission electron microscopy (HRTEM) and all samples showed amorphous structures. The composition of the charge trapping lanthanum aluminum oxide were analyzed using X-ray photoelectron spectroscopy (XPS). From C-V measurements, a maximum memory window of 3.48 V was observed when the flow rate ratio was La: Al = 3: 3. The memory properties were affected by the band structure, trap energy level/density, and dielectric constant of the charge trap layer. In the reliability cycling tests, all samples maintained their initial memory window over 104 cycles.",
author = "Seung, {Yong Cha} and Hyo, {June Kim} and Choi, {Doo Jin}",
year = "2011",
month = "8",
day = "5",
language = "English",
volume = "12",
pages = "57--61",
journal = "Journal of Ceramic Processing Research",
issn = "1229-9162",
publisher = "Hanyang University",
number = "1",

}

A study of the memory characteristics of multilayer structures with varying compositions of the LAO charge trap. / Seung, Yong Cha; Hyo, June Kim; Choi, Doo Jin.

In: Journal of Ceramic Processing Research, Vol. 12, No. 1, 05.08.2011, p. 57-61.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A study of the memory characteristics of multilayer structures with varying compositions of the LAO charge trap

AU - Seung, Yong Cha

AU - Hyo, June Kim

AU - Choi, Doo Jin

PY - 2011/8/5

Y1 - 2011/8/5

N2 - Charge trap flash (CTF) memory devices are candidates to replace NAND flash devices. In this study, Si multilayer structures with lanthanum aluminum oxide charge traps were fabricated for nonvolatile memory device applications. An aluminum oxide film was used as a blocking oxide for low power consumption in the program/erase operations and to minimize charge transport through the blocking oxide layer. The thickness of SiO2 as a tunnel oxide layer was 40 Å. The thicknesses of the oxide layers were determined by high resolution transmission electron microscopy (HRTEM) and all samples showed amorphous structures. The composition of the charge trapping lanthanum aluminum oxide were analyzed using X-ray photoelectron spectroscopy (XPS). From C-V measurements, a maximum memory window of 3.48 V was observed when the flow rate ratio was La: Al = 3: 3. The memory properties were affected by the band structure, trap energy level/density, and dielectric constant of the charge trap layer. In the reliability cycling tests, all samples maintained their initial memory window over 104 cycles.

AB - Charge trap flash (CTF) memory devices are candidates to replace NAND flash devices. In this study, Si multilayer structures with lanthanum aluminum oxide charge traps were fabricated for nonvolatile memory device applications. An aluminum oxide film was used as a blocking oxide for low power consumption in the program/erase operations and to minimize charge transport through the blocking oxide layer. The thickness of SiO2 as a tunnel oxide layer was 40 Å. The thicknesses of the oxide layers were determined by high resolution transmission electron microscopy (HRTEM) and all samples showed amorphous structures. The composition of the charge trapping lanthanum aluminum oxide were analyzed using X-ray photoelectron spectroscopy (XPS). From C-V measurements, a maximum memory window of 3.48 V was observed when the flow rate ratio was La: Al = 3: 3. The memory properties were affected by the band structure, trap energy level/density, and dielectric constant of the charge trap layer. In the reliability cycling tests, all samples maintained their initial memory window over 104 cycles.

UR - http://www.scopus.com/inward/record.url?scp=79960971891&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960971891&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:79960971891

VL - 12

SP - 57

EP - 61

JO - Journal of Ceramic Processing Research

JF - Journal of Ceramic Processing Research

SN - 1229-9162

IS - 1

ER -