Abstract
In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.
| Original language | English |
|---|---|
| Pages (from-to) | 210-214 |
| Number of pages | 5 |
| Journal | Journal of Semiconductor Technology and Science |
| Volume | 16 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2016 Apr |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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A study on contact resistance reduction in Ni Germanide/Ge using Sb interlayer. / Kim, Jeyoung; Li, Meng; Lee, Ga Won; Oh, Jungwoo; Lee, Hi Deok.
In: Journal of Semiconductor Technology and Science, Vol. 16, No. 2, 04.2016, p. 210-214.Research output: Contribution to journal › Article
TY - JOUR
T1 - A study on contact resistance reduction in Ni Germanide/Ge using Sb interlayer
AU - Kim, Jeyoung
AU - Li, Meng
AU - Lee, Ga Won
AU - Oh, Jungwoo
AU - Lee, Hi Deok
PY - 2016/4
Y1 - 2016/4
N2 - In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.
AB - In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.
UR - http://www.scopus.com/inward/record.url?scp=84964839651&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84964839651&partnerID=8YFLogxK
U2 - 10.5573/JSTS.2016.16.2.210
DO - 10.5573/JSTS.2016.16.2.210
M3 - Article
AN - SCOPUS:84964839651
VL - 16
SP - 210
EP - 214
JO - Journal of Semiconductor Technology and Science
JF - Journal of Semiconductor Technology and Science
SN - 1598-1657
IS - 2
ER -