In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the ion beam alignment method on the a-C:H thin film. The suitable inorganic thin films for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film were studied. An excellent voltage-transmittance (V-T) and response time curve of the ion beam aligned FFS cell was observed with oblique ion beam exposure on the a-C:H thin films. Also, the V-T hysteresis characteristics of the ion beam-aligned FFS cell with IB exposure on the a-C:H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.
Bibliographical noteFunding Information:
Keywords: a-C:H thin films; fringe-field switching; ion beam alignment; response time; V-T curve; V-T hysteresis This work was supported by National Research Laboratory program (M1-0203-00-0008) & the Ministry of Information & Communications of Korea under the Information Technology Research Center (ITRC) Program.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics