A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors

Kyung Park, Chee Hong An, Byung Il Hwang, Hoo Jeong Lee, Hyoungsub Kim, Kyungseok Son, Jang Yeon Kwon, Sangyun Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This study examined the degradation of the device performance of InGaZnO4 (IGZO)-based thin-film transistors after annealing at high temperatures in air ambient. Using various characterization methods including scanning electron microscopy, x-ray diffraction, and transmission electron microscopy, we were able to disclose the details of a two-stage phase transformation that led to the device performance degradation. The Mo electrodes first succumbed to oxidation at moderate temperatures (400-500 °C) and then the Mo oxide further reacted with IGZO to produce an In-Mo-O compound with some Ga at higher temperatures (600-700 °C). We analyzed our results based on the thermodynamics and kinetics data available in the literature and confirmed that our findings are in agreement with the experimental results.

Original languageEnglish
Pages (from-to)266-271
Number of pages6
JournalJournal of Materials Research
Volume25
Issue number2
DOIs
Publication statusPublished - 2010 Feb 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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