A study on modulation configuration of optoelectronic oscillators using direct modulation of semiconductor lasers

Jae Young Kim, Woo Young Choi, Hyuk Kee Sung

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Optoelectronic oscillators (OEOs) are demonstrated using optical single sideband (SSB) which is generated by resonance effect in directlymodulated semiconductor lasers under optical injection. The resonant amplification of modulated optical sideband enhances the optical link efficiency in a target oscillation frequency so that RF threshold gain of OEO can be significantly reduced. The OEOs based on two different modulation configurations-master laser and slave laser modulation-show comparable efficiency and phase noise performance.

Original languageEnglish
Article number032504
JournalJapanese Journal of Applied Physics
Volume50
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

Fingerprint

Optoelectronic devices
Semiconductor lasers
semiconductor lasers
oscillators
Modulation
sidebands
modulation
configurations
Optical links
Lasers
Phase noise
lasers
Amplification
injection
oscillations
thresholds

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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A study on modulation configuration of optoelectronic oscillators using direct modulation of semiconductor lasers. / Kim, Jae Young; Choi, Woo Young; Sung, Hyuk Kee.

In: Japanese Journal of Applied Physics, Vol. 50, No. 3, 032504, 01.03.2011.

Research output: Contribution to journalArticle

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