A study on oxidation behavior of poly-Si1-xGex films

H. B. Kang, J. H. Lee, C. W. Yang, S. K. Kang, B. K. Min, D. H. Ko, T. H. Ahn, I. S. Yeo, K. C. Lee, T. W. Lee, Y. H. Lee

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We have investigated the oxidation behavior of poly-Si1-xGex films with 20%, 40 %, and 60 % Ge content in both dry and wet oxygen ambient. Poly-Si1-xGex films with various compositions and about 1000 Å in thickness were deposited on oxidized Si wafers (with 1000 Å thick thermal SiO2). Oxidation was carried out in a conventional tube furnace at 800 °C. The composition and thickness of the oxide were analyzed by RBS using rump simulation. The redistribution and chemical bonding of Si, Ge, and O elements were analyzed by XPS. The microstructure and phases formed in the films were analyzed by HR-TEM. In this study, it was found that Si was oxidized preferentially when the content of Ge in the alloy was low (20 %, 40 %). SiO2 was formed on the poly-Si1-xGex films, rejecting Ge and the oxidation rate of the poly-Si1-xGex films depends weakly on the Ge concentration. On the other hand, Si and Ge were oxidized simultaneously when the content of Ge was high (60 %). The formation of a mixed oxide layer on the poly-Si1-xGex films was observed. It was also found that oxide surface has a tendency to be flat from the initial oxidation stage due to the fast oxidation rate of Ge-rich films.

Original languageEnglish
Pages (from-to)S508-S513
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
Publication statusPublished - 2003 Feb 1
EventProceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of
Duration: 2002 Aug 202002 Aug 23

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oxidation
oxides
mixed oxides
furnaces
tendencies
wafers
tubes
transmission electron microscopy
microstructure
oxygen
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kang, H. B., Lee, J. H., Yang, C. W., Kang, S. K., Min, B. K., Ko, D. H., ... Lee, Y. H. (2003). A study on oxidation behavior of poly-Si1-xGex films. Journal of the Korean Physical Society, 42(SPEC.), S508-S513.
Kang, H. B. ; Lee, J. H. ; Yang, C. W. ; Kang, S. K. ; Min, B. K. ; Ko, D. H. ; Ahn, T. H. ; Yeo, I. S. ; Lee, K. C. ; Lee, T. W. ; Lee, Y. H. / A study on oxidation behavior of poly-Si1-xGex films. In: Journal of the Korean Physical Society. 2003 ; Vol. 42, No. SPEC. pp. S508-S513.
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title = "A study on oxidation behavior of poly-Si1-xGex films",
abstract = "We have investigated the oxidation behavior of poly-Si1-xGex films with 20{\%}, 40 {\%}, and 60 {\%} Ge content in both dry and wet oxygen ambient. Poly-Si1-xGex films with various compositions and about 1000 {\AA} in thickness were deposited on oxidized Si wafers (with 1000 {\AA} thick thermal SiO2). Oxidation was carried out in a conventional tube furnace at 800 °C. The composition and thickness of the oxide were analyzed by RBS using rump simulation. The redistribution and chemical bonding of Si, Ge, and O elements were analyzed by XPS. The microstructure and phases formed in the films were analyzed by HR-TEM. In this study, it was found that Si was oxidized preferentially when the content of Ge in the alloy was low (20 {\%}, 40 {\%}). SiO2 was formed on the poly-Si1-xGex films, rejecting Ge and the oxidation rate of the poly-Si1-xGex films depends weakly on the Ge concentration. On the other hand, Si and Ge were oxidized simultaneously when the content of Ge was high (60 {\%}). The formation of a mixed oxide layer on the poly-Si1-xGex films was observed. It was also found that oxide surface has a tendency to be flat from the initial oxidation stage due to the fast oxidation rate of Ge-rich films.",
author = "Kang, {H. B.} and Lee, {J. H.} and Yang, {C. W.} and Kang, {S. K.} and Min, {B. K.} and Ko, {D. H.} and Ahn, {T. H.} and Yeo, {I. S.} and Lee, {K. C.} and Lee, {T. W.} and Lee, {Y. H.}",
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Kang, HB, Lee, JH, Yang, CW, Kang, SK, Min, BK, Ko, DH, Ahn, TH, Yeo, IS, Lee, KC, Lee, TW & Lee, YH 2003, 'A study on oxidation behavior of poly-Si1-xGex films', Journal of the Korean Physical Society, vol. 42, no. SPEC., pp. S508-S513.

A study on oxidation behavior of poly-Si1-xGex films. / Kang, H. B.; Lee, J. H.; Yang, C. W.; Kang, S. K.; Min, B. K.; Ko, D. H.; Ahn, T. H.; Yeo, I. S.; Lee, K. C.; Lee, T. W.; Lee, Y. H.

In: Journal of the Korean Physical Society, Vol. 42, No. SPEC., 01.02.2003, p. S508-S513.

Research output: Contribution to journalConference article

TY - JOUR

T1 - A study on oxidation behavior of poly-Si1-xGex films

AU - Kang, H. B.

AU - Lee, J. H.

AU - Yang, C. W.

AU - Kang, S. K.

AU - Min, B. K.

AU - Ko, D. H.

AU - Ahn, T. H.

AU - Yeo, I. S.

AU - Lee, K. C.

AU - Lee, T. W.

AU - Lee, Y. H.

PY - 2003/2/1

Y1 - 2003/2/1

N2 - We have investigated the oxidation behavior of poly-Si1-xGex films with 20%, 40 %, and 60 % Ge content in both dry and wet oxygen ambient. Poly-Si1-xGex films with various compositions and about 1000 Å in thickness were deposited on oxidized Si wafers (with 1000 Å thick thermal SiO2). Oxidation was carried out in a conventional tube furnace at 800 °C. The composition and thickness of the oxide were analyzed by RBS using rump simulation. The redistribution and chemical bonding of Si, Ge, and O elements were analyzed by XPS. The microstructure and phases formed in the films were analyzed by HR-TEM. In this study, it was found that Si was oxidized preferentially when the content of Ge in the alloy was low (20 %, 40 %). SiO2 was formed on the poly-Si1-xGex films, rejecting Ge and the oxidation rate of the poly-Si1-xGex films depends weakly on the Ge concentration. On the other hand, Si and Ge were oxidized simultaneously when the content of Ge was high (60 %). The formation of a mixed oxide layer on the poly-Si1-xGex films was observed. It was also found that oxide surface has a tendency to be flat from the initial oxidation stage due to the fast oxidation rate of Ge-rich films.

AB - We have investigated the oxidation behavior of poly-Si1-xGex films with 20%, 40 %, and 60 % Ge content in both dry and wet oxygen ambient. Poly-Si1-xGex films with various compositions and about 1000 Å in thickness were deposited on oxidized Si wafers (with 1000 Å thick thermal SiO2). Oxidation was carried out in a conventional tube furnace at 800 °C. The composition and thickness of the oxide were analyzed by RBS using rump simulation. The redistribution and chemical bonding of Si, Ge, and O elements were analyzed by XPS. The microstructure and phases formed in the films were analyzed by HR-TEM. In this study, it was found that Si was oxidized preferentially when the content of Ge in the alloy was low (20 %, 40 %). SiO2 was formed on the poly-Si1-xGex films, rejecting Ge and the oxidation rate of the poly-Si1-xGex films depends weakly on the Ge concentration. On the other hand, Si and Ge were oxidized simultaneously when the content of Ge was high (60 %). The formation of a mixed oxide layer on the poly-Si1-xGex films was observed. It was also found that oxide surface has a tendency to be flat from the initial oxidation stage due to the fast oxidation rate of Ge-rich films.

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M3 - Conference article

AN - SCOPUS:0037306799

VL - 42

SP - S508-S513

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SPEC.

ER -

Kang HB, Lee JH, Yang CW, Kang SK, Min BK, Ko DH et al. A study on oxidation behavior of poly-Si1-xGex films. Journal of the Korean Physical Society. 2003 Feb 1;42(SPEC.):S508-S513.