A study on oxidation behavior of poly-Si1-xGex films

H. B. Kang; J. H. Lee; C. W. Yang; S. K. Kang; B. K. Min; D. H. Ko; T. H. Ahn; I. S. Yeo; K. C. Lee; T. W. Lee; Y. H. Lee

A study on oxidation behavior of poly-Si_1-xGe_x films

H. B. Kang, J. H. Lee, C. W. Yang, S. K. Kang, B. K. Min, D. H. Ko, T. H. Ahn, I. S. Yeo, K. C. Lee, T. W. Lee, Y. H. Lee

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have investigated the oxidation behavior of poly-Si_1-xGe_x films with 20%, 40 %, and 60 % Ge content in both dry and wet oxygen ambient. Poly-Si_1-xGe_x films with various compositions and about 1000 Å in thickness were deposited on oxidized Si wafers (with 1000 Å thick thermal SiO₂). Oxidation was carried out in a conventional tube furnace at 800 °C. The composition and thickness of the oxide were analyzed by RBS using rump simulation. The redistribution and chemical bonding of Si, Ge, and O elements were analyzed by XPS. The microstructure and phases formed in the films were analyzed by HR-TEM. In this study, it was found that Si was oxidized preferentially when the content of Ge in the alloy was low (20 %, 40 %). SiO₂ was formed on the poly-Si_1-xGe_x films, rejecting Ge and the oxidation rate of the poly-Si_1-xGe_x films depends weakly on the Ge concentration. On the other hand, Si and Ge were oxidized simultaneously when the content of Ge was high (60 %). The formation of a mixed oxide layer on the poly-Si_1-xGe_x films was observed. It was also found that oxide surface has a tendency to be flat from the initial oxidation stage due to the fast oxidation rate of Ge-rich films.

Original language	English
Pages (from-to)	S508-S513
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - 2003 Feb
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 2002 Aug 20 → 2002 Aug 23

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

@article{eb24402917514b60859b0c8c89e52b7a,

title = "A study on oxidation behavior of poly-Si1-xGex films",

abstract = "We have investigated the oxidation behavior of poly-Si1-xGex films with 20%, 40 %, and 60 % Ge content in both dry and wet oxygen ambient. Poly-Si1-xGex films with various compositions and about 1000 {\AA} in thickness were deposited on oxidized Si wafers (with 1000 {\AA} thick thermal SiO2). Oxidation was carried out in a conventional tube furnace at 800 °C. The composition and thickness of the oxide were analyzed by RBS using rump simulation. The redistribution and chemical bonding of Si, Ge, and O elements were analyzed by XPS. The microstructure and phases formed in the films were analyzed by HR-TEM. In this study, it was found that Si was oxidized preferentially when the content of Ge in the alloy was low (20 %, 40 %). SiO2 was formed on the poly-Si1-xGex films, rejecting Ge and the oxidation rate of the poly-Si1-xGex films depends weakly on the Ge concentration. On the other hand, Si and Ge were oxidized simultaneously when the content of Ge was high (60 %). The formation of a mixed oxide layer on the poly-Si1-xGex films was observed. It was also found that oxide surface has a tendency to be flat from the initial oxidation stage due to the fast oxidation rate of Ge-rich films.",

author = "Kang, {H. B.} and Lee, {J. H.} and Yang, {C. W.} and Kang, {S. K.} and Min, {B. K.} and Ko, {D. H.} and Ahn, {T. H.} and Yeo, {I. S.} and Lee, {K. C.} and Lee, {T. W.} and Lee, {Y. H.}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S508--S513",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

note = "Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

}

TY - JOUR

T1 - A study on oxidation behavior of poly-Si1-xGex films

AU - Kang, H. B.

AU - Lee, J. H.

AU - Yang, C. W.

AU - Kang, S. K.

AU - Min, B. K.

AU - Ko, D. H.

AU - Ahn, T. H.

AU - Yeo, I. S.

AU - Lee, K. C.

AU - Lee, T. W.

AU - Lee, Y. H.

PY - 2003/2

Y1 - 2003/2

N2 - We have investigated the oxidation behavior of poly-Si1-xGex films with 20%, 40 %, and 60 % Ge content in both dry and wet oxygen ambient. Poly-Si1-xGex films with various compositions and about 1000 Å in thickness were deposited on oxidized Si wafers (with 1000 Å thick thermal SiO2). Oxidation was carried out in a conventional tube furnace at 800 °C. The composition and thickness of the oxide were analyzed by RBS using rump simulation. The redistribution and chemical bonding of Si, Ge, and O elements were analyzed by XPS. The microstructure and phases formed in the films were analyzed by HR-TEM. In this study, it was found that Si was oxidized preferentially when the content of Ge in the alloy was low (20 %, 40 %). SiO2 was formed on the poly-Si1-xGex films, rejecting Ge and the oxidation rate of the poly-Si1-xGex films depends weakly on the Ge concentration. On the other hand, Si and Ge were oxidized simultaneously when the content of Ge was high (60 %). The formation of a mixed oxide layer on the poly-Si1-xGex films was observed. It was also found that oxide surface has a tendency to be flat from the initial oxidation stage due to the fast oxidation rate of Ge-rich films.

AB - We have investigated the oxidation behavior of poly-Si1-xGex films with 20%, 40 %, and 60 % Ge content in both dry and wet oxygen ambient. Poly-Si1-xGex films with various compositions and about 1000 Å in thickness were deposited on oxidized Si wafers (with 1000 Å thick thermal SiO2). Oxidation was carried out in a conventional tube furnace at 800 °C. The composition and thickness of the oxide were analyzed by RBS using rump simulation. The redistribution and chemical bonding of Si, Ge, and O elements were analyzed by XPS. The microstructure and phases formed in the films were analyzed by HR-TEM. In this study, it was found that Si was oxidized preferentially when the content of Ge in the alloy was low (20 %, 40 %). SiO2 was formed on the poly-Si1-xGex films, rejecting Ge and the oxidation rate of the poly-Si1-xGex films depends weakly on the Ge concentration. On the other hand, Si and Ge were oxidized simultaneously when the content of Ge was high (60 %). The formation of a mixed oxide layer on the poly-Si1-xGex films was observed. It was also found that oxide surface has a tendency to be flat from the initial oxidation stage due to the fast oxidation rate of Ge-rich films.

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M3 - Conference article

AN - SCOPUS:0037306799

SN - 0374-4884

VL - 42

SP - S508-S513

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

A study on oxidation behavior of poly-Si_1-xGe_x films

Abstract

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