A study on the characteristics of hydrated La2O3 thin films with different oxidation gases on the various annealing temperature

Hyo June Kim; Jin Hyung Jun; Doo Jin Choi

doi:10.1007/s10832-008-9415-4

A study on the characteristics of hydrated La₂O₃ thin films with different oxidation gases on the various annealing temperature

Hyo June Kim, Jin Hyung Jun, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In order to investigate the structural and electrical properties of La ₂O₃ films deposited by O₂ and O₃, films were hydrated in DI-water and annealed at 600 and 900 °C. La ₂O₃ films deposited by O₃ showed better hydration resistance than those deposited by O₂. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La₂O ₃ films deposited by O₃ were greater than films deposited by O₂ after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La₂O₃ films deposited by O₃ was lower than those by O₂ after annealing at 900 °C. To this end, La₂O₃ films deposited by O₃ showed better dissolution resistance than O ₂ for hydration experiment as a function of dipping time.

Original language	English
Pages (from-to)	258-261
Number of pages	4
Journal	Journal of Electroceramics
Volume	23
Issue number	2-4
DOIs	https://doi.org/10.1007/s10832-008-9415-4
Publication status	Published - 2009 Oct

Bibliographical note

Funding Information:
Acknowledgment This work was supported by the Second Stage of the Brain Korea 21 Project in 2007.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Mechanics of Materials
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1007/s10832-008-9415-4

Cite this

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title = "A study on the characteristics of hydrated La2O3 thin films with different oxidation gases on the various annealing temperature",

abstract = "In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.",

author = "Kim, {Hyo June} and Jun, {Jin Hyung} and Choi, {Doo Jin}",

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T1 - A study on the characteristics of hydrated La2O3 thin films with different oxidation gases on the various annealing temperature

AU - Kim, Hyo June

AU - Jun, Jin Hyung

AU - Choi, Doo Jin

N1 - Funding Information: Acknowledgment This work was supported by the Second Stage of the Brain Korea 21 Project in 2007.

PY - 2009/10

Y1 - 2009/10

N2 - In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.

AB - In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.

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