Abstract
In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.
| Original language | English |
|---|---|
| Pages (from-to) | 258-261 |
| Number of pages | 4 |
| Journal | Journal of Electroceramics |
| Volume | 23 |
| Issue number | 2-4 |
| DOIs | |
| Publication status | Published - 2009 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Mechanics of Materials
- Materials Chemistry
- Electrical and Electronic Engineering
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A study on the characteristics of hydrated La2O3 thin films with different oxidation gases on the various annealing temperature. / Kim, Hyo June; Jun, Jin Hyung; Choi, Doo Jin.
In: Journal of Electroceramics, Vol. 23, No. 2-4, 01.10.2009, p. 258-261.Research output: Contribution to journal › Article
TY - JOUR
T1 - A study on the characteristics of hydrated La2O3 thin films with different oxidation gases on the various annealing temperature
AU - Kim, Hyo June
AU - Jun, Jin Hyung
AU - Choi, Doo Jin
PY - 2009/10/1
Y1 - 2009/10/1
N2 - In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.
AB - In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.
UR - http://www.scopus.com/inward/record.url?scp=73449123773&partnerID=8YFLogxK
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U2 - 10.1007/s10832-008-9415-4
DO - 10.1007/s10832-008-9415-4
M3 - Article
VL - 23
SP - 258
EP - 261
JO - Journal of Electroceramics
JF - Journal of Electroceramics
SN - 1385-3449
IS - 2-4
ER -