A study on the characteristics of hydrated La2O3 thin films with different oxidation gases on the various annealing temperature

Hyo June Kim; Jin Hyung Jun; Doo Jin Choi

doi:10.1007/s10832-008-9415-4

A study on the characteristics of hydrated La₂O₃ thin films with different oxidation gases on the various annealing temperature

Hyo June Kim, Jin Hyung Jun, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

In order to investigate the structural and electrical properties of La ₂O₃ films deposited by O₂ and O₃, films were hydrated in DI-water and annealed at 600 and 900 °C. La ₂O₃ films deposited by O₃ showed better hydration resistance than those deposited by O₂. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La₂O ₃ films deposited by O₃ were greater than films deposited by O₂ after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La₂O₃ films deposited by O₃ was lower than those by O₂ after annealing at 900 °C. To this end, La₂O₃ films deposited by O₃ showed better dissolution resistance than O ₂ for hydration experiment as a function of dipping time.

Original language	English
Pages (from-to)	258-261
Number of pages	4
Journal	Journal of Electroceramics
Volume	23
Issue number	2-4
DOIs	https://doi.org/10.1007/s10832-008-9415-4
Publication status	Published - 2009 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Mechanics of Materials
Materials Chemistry
Electrical and Electronic Engineering

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Kim, H. J., Jun, J. H., & Choi, D. J. (2009). A study on the characteristics of hydrated La₂O₃ thin films with different oxidation gases on the various annealing temperature. Journal of Electroceramics, 23(2-4), 258-261. https://doi.org/10.1007/s10832-008-9415-4

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abstract = "In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.",

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N2 - In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.

AB - In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.

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