In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.
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Acknowledgment This work was supported by the Second Stage of the Brain Korea 21 Project in 2007.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Mechanics of Materials
- Materials Chemistry
- Electrical and Electronic Engineering