A study on the characteristics of hydrated La2O3 thin films with different oxidation gases on the various annealing temperature

Hyo June Kim, Jin Hyung Jun, Doo Jin Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.

Original languageEnglish
Pages (from-to)258-261
Number of pages4
JournalJournal of Electroceramics
Volume23
Issue number2-4
DOIs
Publication statusPublished - 2009 Oct 1

Fingerprint

Gases
Annealing
Thin films
Oxidation
oxidation
annealing
thin films
gases
Temperature
temperature
Hydration
hydration
dipping
Leakage currents
Structural properties
dissolving
Dissolution
Electric properties
leakage
Permittivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.",
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A study on the characteristics of hydrated La2O3 thin films with different oxidation gases on the various annealing temperature. / Kim, Hyo June; Jun, Jin Hyung; Choi, Doo Jin.

In: Journal of Electroceramics, Vol. 23, No. 2-4, 01.10.2009, p. 258-261.

Research output: Contribution to journalArticle

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AU - Jun, Jin Hyung

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AB - In order to investigate the structural and electrical properties of La 2O3 films deposited by O2 and O3, films were hydrated in DI-water and annealed at 600 and 900 °C. La 2O3 films deposited by O3 showed better hydration resistance than those deposited by O2. The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La2O 3 films deposited by O3 were greater than films deposited by O2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La2O3 films deposited by O3 was lower than those by O2 after annealing at 900 °C. To this end, La2O3 films deposited by O3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.

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