TY - JOUR
T1 - A study on the crystallization behavior of nitrogen doped Ge 2Sb2Te5 thin film
AU - Kim, Suk Min
AU - Jun, Jin Hyung
AU - Choi, Doo Jin
AU - Hong, Suk Kyoung
AU - Park, Young Jin
PY - 2005
Y1 - 2005
N2 - We investigated the crystallization behaviors of nitrogen doped Ge 2Sb2Te5 thin films deposited in various nitrogen gas flow rates by means of the 4-point probe technique, X-ray diffraction and transmission electron microscopy (TEM), and we mapped the change of crystallization behavior on annealing temperatures. Nitrogen doping resulted in an increase of crystallization temperature from amorphous to fcc structure and maintained the fcc structure up to a higher annealing temperature than un-doped film did. However, crystallization behavior in heavily nitrogen-doped film occurred from an amorphous directly to a hexagonal state, skipping the fee crystallization step.
AB - We investigated the crystallization behaviors of nitrogen doped Ge 2Sb2Te5 thin films deposited in various nitrogen gas flow rates by means of the 4-point probe technique, X-ray diffraction and transmission electron microscopy (TEM), and we mapped the change of crystallization behavior on annealing temperatures. Nitrogen doping resulted in an increase of crystallization temperature from amorphous to fcc structure and maintained the fcc structure up to a higher annealing temperature than un-doped film did. However, crystallization behavior in heavily nitrogen-doped film occurred from an amorphous directly to a hexagonal state, skipping the fee crystallization step.
UR - http://www.scopus.com/inward/record.url?scp=17444422193&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17444422193&partnerID=8YFLogxK
U2 - 10.1143/JJAP.44.L208
DO - 10.1143/JJAP.44.L208
M3 - Article
AN - SCOPUS:17444422193
SN - 0021-4922
VL - 44
SP - L208-L210
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 1-7
ER -