The structural and electrical properties of Al2O 3/La2O3/Al2O3 (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at 600°C were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at 600°C were 11 V for 10 ms (program) and-11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the Vth distributions of all films were not changed up to about 104 cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.
All Science Journal Classification (ASJC) codes
- Ceramics and Composites