A study on the electrical properties of Al2O3/La 2O3/Al2O3 multi-stacked films using tunnel oxide annealed at various temperatures

Hyo June Kim, Seung Yong Cha, Doo Jin Choi

Research output: Contribution to journalArticle

Abstract

The structural and electrical properties of Al2O 3/La2O3/Al2O3 (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at 600°C were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at 600°C were 11 V for 10 ms (program) and-11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the Vth distributions of all films were not changed up to about 104 cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.

Original languageEnglish
Pages (from-to)436-440
Number of pages5
JournalJournal of the Korean Ceramic Society
Volume46
Issue number4
DOIs
Publication statusPublished - 2009 Jul 1

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Oxides
Tunnels
Electric properties
Data storage equipment
Temperature
Flash memory
Structural properties
Electric potential

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

@article{6a4dda1cd0f84efe8912841dcda752c5,
title = "A study on the electrical properties of Al2O3/La 2O3/Al2O3 multi-stacked films using tunnel oxide annealed at various temperatures",
abstract = "The structural and electrical properties of Al2O 3/La2O3/Al2O3 (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at 600°C were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at 600°C were 11 V for 10 ms (program) and-11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the Vth distributions of all films were not changed up to about 104 cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.",
author = "Kim, {Hyo June} and Cha, {Seung Yong} and Choi, {Doo Jin}",
year = "2009",
month = "7",
day = "1",
doi = "10.4191/KCERS.2009.46.4.436",
language = "English",
volume = "46",
pages = "436--440",
journal = "Journal of the Korean Ceramic Society",
issn = "1229-7801",
publisher = "Korean Ceramic Society",
number = "4",

}

A study on the electrical properties of Al2O3/La 2O3/Al2O3 multi-stacked films using tunnel oxide annealed at various temperatures. / Kim, Hyo June; Cha, Seung Yong; Choi, Doo Jin.

In: Journal of the Korean Ceramic Society, Vol. 46, No. 4, 01.07.2009, p. 436-440.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A study on the electrical properties of Al2O3/La 2O3/Al2O3 multi-stacked films using tunnel oxide annealed at various temperatures

AU - Kim, Hyo June

AU - Cha, Seung Yong

AU - Choi, Doo Jin

PY - 2009/7/1

Y1 - 2009/7/1

N2 - The structural and electrical properties of Al2O 3/La2O3/Al2O3 (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at 600°C were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at 600°C were 11 V for 10 ms (program) and-11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the Vth distributions of all films were not changed up to about 104 cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.

AB - The structural and electrical properties of Al2O 3/La2O3/Al2O3 (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at 600°C were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at 600°C were 11 V for 10 ms (program) and-11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the Vth distributions of all films were not changed up to about 104 cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.

UR - http://www.scopus.com/inward/record.url?scp=72149086915&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72149086915&partnerID=8YFLogxK

U2 - 10.4191/KCERS.2009.46.4.436

DO - 10.4191/KCERS.2009.46.4.436

M3 - Article

AN - SCOPUS:72149086915

VL - 46

SP - 436

EP - 440

JO - Journal of the Korean Ceramic Society

JF - Journal of the Korean Ceramic Society

SN - 1229-7801

IS - 4

ER -