Abstract
The structural and electrical properties of Al2O 3/La2O3/Al2O3 (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at 600°C were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at 600°C were 11 V for 10 ms (program) and-11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the Vth distributions of all films were not changed up to about 104 cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.
| Original language | English |
|---|---|
| Pages (from-to) | 436-440 |
| Number of pages | 5 |
| Journal | Journal of the Korean Ceramic Society |
| Volume | 46 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2009 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
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A study on the electrical properties of Al2O3/La 2O3/Al2O3 multi-stacked films using tunnel oxide annealed at various temperatures. / Kim, Hyo June; Cha, Seung Yong; Choi, Doo Jin.
In: Journal of the Korean Ceramic Society, Vol. 46, No. 4, 01.07.2009, p. 436-440.Research output: Contribution to journal › Article
TY - JOUR
T1 - A study on the electrical properties of Al2O3/La 2O3/Al2O3 multi-stacked films using tunnel oxide annealed at various temperatures
AU - Kim, Hyo June
AU - Cha, Seung Yong
AU - Choi, Doo Jin
PY - 2009/7/1
Y1 - 2009/7/1
N2 - The structural and electrical properties of Al2O 3/La2O3/Al2O3 (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at 600°C were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at 600°C were 11 V for 10 ms (program) and-11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the Vth distributions of all films were not changed up to about 104 cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.
AB - The structural and electrical properties of Al2O 3/La2O3/Al2O3 (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at 600°C were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at 600°C were 11 V for 10 ms (program) and-11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the Vth distributions of all films were not changed up to about 104 cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.
UR - http://www.scopus.com/inward/record.url?scp=72149086915&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=72149086915&partnerID=8YFLogxK
U2 - 10.4191/KCERS.2009.46.4.436
DO - 10.4191/KCERS.2009.46.4.436
M3 - Article
AN - SCOPUS:72149086915
VL - 46
SP - 436
EP - 440
JO - Journal of the Korean Ceramic Society
JF - Journal of the Korean Ceramic Society
SN - 1229-7801
IS - 4
ER -