A study on the electrical properties of fluorine doped direct-patternable SnO 2 thin films

Hyuncheol Kim, Hyung-Ho Park

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Direct-patternable fluorine doped SnO 2 (FTO) thin films were fabricated by a photochemical solution deposition method. The electrical properties and crystallinity of FTO thin films were slightly enhanced relative to undoped SnO 2 films and the improvement of electrical conduction was found to be due to an increase of carrier concentration. Direct-patterning of FTO thin films was performed without using photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of direct-patternable SnO 2 films can be improved by fluorine doping.

Original languageEnglish
JournalCeramics International
Volume38
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Fluorine
Electric properties
Thin films
Dry etching
Photoresists
Carrier concentration
Doping (additives)
Costs

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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A study on the electrical properties of fluorine doped direct-patternable SnO 2 thin films. / Kim, Hyuncheol; Park, Hyung-Ho.

In: Ceramics International, Vol. 38, No. SUPPL. 1, 01.01.2012.

Research output: Contribution to journalArticle

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N2 - Direct-patternable fluorine doped SnO 2 (FTO) thin films were fabricated by a photochemical solution deposition method. The electrical properties and crystallinity of FTO thin films were slightly enhanced relative to undoped SnO 2 films and the improvement of electrical conduction was found to be due to an increase of carrier concentration. Direct-patterning of FTO thin films was performed without using photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of direct-patternable SnO 2 films can be improved by fluorine doping.

AB - Direct-patternable fluorine doped SnO 2 (FTO) thin films were fabricated by a photochemical solution deposition method. The electrical properties and crystallinity of FTO thin films were slightly enhanced relative to undoped SnO 2 films and the improvement of electrical conduction was found to be due to an increase of carrier concentration. Direct-patterning of FTO thin films was performed without using photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of direct-patternable SnO 2 films can be improved by fluorine doping.

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