A study on the electrical properties of fluorine doped direct-patternable SnO 2 thin films

Hyuncheol Kim, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Direct-patternable fluorine doped SnO 2 (FTO) thin films were fabricated by a photochemical solution deposition method. The electrical properties and crystallinity of FTO thin films were slightly enhanced relative to undoped SnO 2 films and the improvement of electrical conduction was found to be due to an increase of carrier concentration. Direct-patterning of FTO thin films was performed without using photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of direct-patternable SnO 2 films can be improved by fluorine doping.

Original languageEnglish
Pages (from-to)S609-S612
JournalCeramics International
Issue numberSUPPL. 1
Publication statusPublished - 2012 Jan

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) ( KRF-2008-313-D00592 ). Experiments at PLS were supported in part by MEST and POSTECH .

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry


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