Direct-patternable fluorine doped SnO 2 (FTO) thin films were fabricated by a photochemical solution deposition method. The electrical properties and crystallinity of FTO thin films were slightly enhanced relative to undoped SnO 2 films and the improvement of electrical conduction was found to be due to an increase of carrier concentration. Direct-patterning of FTO thin films was performed without using photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of direct-patternable SnO 2 films can be improved by fluorine doping.
Bibliographical noteFunding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) ( KRF-2008-313-D00592 ). Experiments at PLS were supported in part by MEST and POSTECH .
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry