A study on the lanthanum aluminate thin film as a gate dielectric material

Jin Hyung Jun, Doo Jin Choi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The lanthanum aluminate (LAO) films with three kinds of Al 2O3 compositions were deposited by metal-organic chemical vapor deposition (MOCVD) method. The electrical and structural properties of the LAO thin films were investigated and compared with those of each other films. The LAO films had flat surfaces for all deposition and annealing conditions. With the changes of the film composition, the LAO films showed various properties such as the dielectric constant and the thickness of interfacial layer. It is thought that the LAO film with specific composition has a possibility to be used as a high-k gate dielectric in future devices.

Original languageEnglish
Pages (from-to)7576-7578
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number11 A
DOIs
Publication statusPublished - 2004 Nov

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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