Abstract
The lanthanum aluminate (LAO) films with three kinds of Al 2O3 compositions were deposited by metal-organic chemical vapor deposition (MOCVD) method. The electrical and structural properties of the LAO thin films were investigated and compared with those of each other films. The LAO films had flat surfaces for all deposition and annealing conditions. With the changes of the film composition, the LAO films showed various properties such as the dielectric constant and the thickness of interfacial layer. It is thought that the LAO film with specific composition has a possibility to be used as a high-k gate dielectric in future devices.
| Original language | English |
|---|---|
| Pages (from-to) | 7576-7578 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 43 |
| Issue number | 11 A |
| DOIs | |
| Publication status | Published - 2004 Nov |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)